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US07851276B2 Methods and structures for planar and multiple-gate transistors formed on SOI 有权
在SOI上形成的平面和多栅极晶体管的方法和结构

Methods and structures for planar and multiple-gate transistors formed on SOI
摘要：
A semiconductor device includes an insulator layer, a semiconductor layer, a first transistor, and a second transistor. The semiconductor layer is overlying the insulator layer. A first portion of the semiconductor layer has a first thickness. A second portion of the semiconductor layer has a second thickness. The second thickness is larger than the first thickness. The first transistor has a first active region formed from the first portion of the semiconductor layer. The second transistor has a second active region formed from the second portion of the semiconductor layer. The first transistor may be a planar transistor and the second transistor may be a multiple-gate transistor, for example.
摘要（中）：

半导体器件包括绝缘体层，半导体层，第一晶体管和第二晶体管。 半导体层覆盖绝缘体层。 半导体层的第一部分具有第一厚度。 半导体层的第二部分具有第二厚度。 第二厚度大于第一厚度。 第一晶体管具有由半导体层的第一部分形成的第一有源区。 第二晶体管具有由半导体层的第二部分形成的第二有源区。 第一晶体管可以是平面晶体管，例如，第二晶体管可以是多栅极晶体管。

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