发明授权
- 专利标题： Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same
- 专利标题（中）： 由多晶薄膜形成的多晶薄膜，薄膜晶体管及其制造方法
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申请号： US12219265申请日： 2008-07-18
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公开(公告)号： US07851802B2公开(公告)日： 2010-12-14
- 发明人: Kyung-bae Park , Seon-mi Yoon , Sang-yoon Lee , Jae-young Choi , Hyeon-jin Shin , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
- 申请人： Kyung-bae Park , Seon-mi Yoon , Sang-yoon Lee , Jae-young Choi , Hyeon-jin Shin , Myung-kwan Ryu , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2007-0118827 20071120
- 主分类号： H01L31/036
- IPC分类号： H01L31/036
摘要：
Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
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