发明授权
- 专利标题： Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating thin film transistor substrate
- 专利标题（中）： 线结构，制造线的方法，薄膜晶体管衬底以及制造薄膜晶体管衬底的方法
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申请号： US11486720申请日： 2006-07-15
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公开(公告)号： US07851920B2公开(公告)日： 2010-12-14
- 发明人: Je-hun Lee , Chang-oh Jeong , Beom-seok Cho , Yang-ho Bae
- 申请人： Je-hun Lee , Chang-oh Jeong , Beom-seok Cho , Yang-ho Bae
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Innovation Counsel LLP
- 优先权： KR10-2005-0064483 20050715
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy.