公开(公告)号：US08793719B2

公开(公告)日：2014-07-29

申请号：US12101131

申请日：2008-04-10

申请人： Beom Seok Cho

发明人： Beom Seok Cho

IPC分类号： H04N7/16

CPC分类号： H04H60/16 ,  H04H2201/80

摘要： A method for controlling viewing a broadcast in a terminal. A terminal having a broadcast control function includes a first replaceable identity device attached to a portion of the terminal and a controller for setting a broadcast viewing level when a second identity device replaces the first identity device, wherein the broadcast viewing level was previously set by the first identity device.

摘要翻译： 一种用于控制在终端中观看广播的方法。 具有广播控制功能的终端包括附接到终端的一部分的第一可替换身份设备和用于在第二身份设备替换第一身份设备时设置广播观看级别的控制器，其中广播观看级别由 第一身份设备。

公开(公告)号：US08372701B2

公开(公告)日：2013-02-12

申请号：US12576217

申请日：2009-10-08

申请人： Je-Hun Lee ,  Yang-Ho Bae ,  Beom-Seok Cho ,  Chang-Oh Jeong

发明人： Je-Hun Lee ,  Yang-Ho Bae ,  Beom-Seok Cho ,  Chang-Oh Jeong

IPC分类号： H01L21/00

CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L27/124

摘要： The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

公开(公告)号：US08252639B2

公开(公告)日：2012-08-28

申请号：US12951981

申请日：2010-11-22

申请人： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

发明人： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/12 ,  H01L29/458

摘要： The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.

摘要翻译： 本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并具有栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在所述栅极绝缘层上且与所述栅电极重叠的半导体; 在半导体上形成并含有氮的扩散阻挡层; 跨越栅极线并且具有部分地接触扩散阻挡层的源电极的数据线; 漏电极部分地接触扩散阻挡层并面对栅电极上的源电极; 以及电连接到漏电极的像素电极。

公开(公告)号：US07998786B2

公开(公告)日：2011-08-16

申请号：US12369839

申请日：2009-02-12

申请人： Je-Hun Lee ,  Jae-Kyeong Lee ,  Chang-Oh Jeong ,  Beom-Seok Cho

发明人： Je-Hun Lee ,  Jae-Kyeong Lee ,  Chang-Oh Jeong ,  Beom-Seok Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L29/458 ,  H01L29/4908

摘要： Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

摘要翻译： 在含有至少一个氧，氮和碳的前体气体的存在下，在基板上沉积钼以形成钼层，形成用于较大平板显示器的多层布线。 铝层沉积在钼层上。 可以在铝层上形成另一金属层。 钼层具有面心立方（FCC）晶格结构，其优选取向为（111）。

公开(公告)号：US07851920B2

公开(公告)日：2010-12-14

申请号：US11486720

申请日：2006-07-15

申请人： Je-hun Lee ,  Chang-oh Jeong ,  Beom-seok Cho ,  Yang-ho Bae

发明人： Je-hun Lee ,  Chang-oh Jeong ,  Beom-seok Cho ,  Yang-ho Bae

IPC分类号： H01L23/48

CPC分类号： H01L27/124 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L23/53238 ,  H01L27/12 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10T29/49117 ,  H01L2924/00

摘要： Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conductive layer formed on the barrier layer and including copper or a copper alloy.

摘要翻译： 提供一种线结构，制造线的方法，薄膜晶体管（TFT）基板以及制造TFT基板的方法。 导线结构包括在基板上形成的阻挡层，其包括形成在阻挡层上并包括铜或铜合金的氮化铜和铜导电层。

公开(公告)号：US07808108B2

公开(公告)日：2010-10-05

申请号：US11502918

申请日：2006-08-11

申请人： Beom-seok Cho ,  Je-hun Lee ,  Chang-oh Jeong ,  Yang-ho Bae

发明人： Beom-seok Cho ,  Je-hun Lee ,  Chang-oh Jeong ,  Yang-ho Bae

IPC分类号： H01L29/43

CPC分类号： H01L27/12 ,  H01L27/124

摘要： A thin film conductor having improved adhesion and superior conductivity, a method for fabricating the same, a thin film transistor (TFT) plate including the thin film conductor, and a method for fabricating the TFT plate are provided. The thin film conductor includes an adhesive layer containing an oxidation-reactive metal or silicidation-reactive metal and silver, a silver conductive layer formed on the adhesive layer, and a protection layer formed on the silver conductive layer and containing an oxidation-reactive metal and silver.

摘要翻译： 提供了具有改善的粘附性和优异导电性的薄膜导体，其制造方法，包括薄膜导体的薄膜晶体管（TFT）板以及制造TFT板的方法。 薄膜导体包括含有氧化反应性金属或硅化反应性金属和银的粘合剂层，形成在粘合剂层上的银导电层，以及形成在银导电层上并含有氧化反应性金属的保护层， 银。

公开(公告)号：US07713798B2

公开(公告)日：2010-05-11

申请号：US12338671

申请日：2008-12-18

申请人： Chang-Oh Jeong ,  Beom-Seok Cho ,  Hee-Hwan Choe

发明人： Chang-Oh Jeong ,  Beom-Seok Cho ,  Hee-Hwan Choe

IPC分类号： H01L21/00

CPC分类号： H01L29/78669 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/456 ,  H01L29/4908

摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.

摘要翻译： 公开了一种LCD装置的薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。 将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。 之后，在约200〜约350℃进行热处理，得到硅化镍层。 由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

公开(公告)号：US20090280808A1

公开(公告)日：2009-11-12

申请号：US12362356

申请日：2009-01-29

申请人： Soo Lim YOU ,  Beom Seok CHO

发明人： Soo Lim YOU ,  Beom Seok CHO

IPC分类号： H04W4/00 ,  H04M1/00

CPC分类号： H04W48/18 ,  H03J1/0066 ,  H03J1/0091 ,  H04W8/005 ,  H04W88/02

摘要： A mobile terminal includes a wireless communication unit configured to search for at least one broadcast service provider based upon frequencies assigned to the at least one broadcast service provider and a controller configured to automatically select a first broadcast service provider from the at least one broadcast service provider and to output broadcast content provided by the selected first broadcast service provider.

摘要翻译： 移动终端包括被配置为基于分配给至少一个广播服务提供商的频率来搜索至少一个广播服务提供商的无线通信单元和被配置为从至少一个广播服务提供商自动选择第一广播服务提供商的控制器 并输出由所选择的第一广播服务提供商提供的广播内容。

公开(公告)号：US20090212298A1

公开(公告)日：2009-08-27

申请号：US12338671

申请日：2008-12-18

申请人： Chang-Oh Jeong ,  Beom-Seok Cho ,  Hee-Hwan Choe

发明人： Chang-Oh Jeong ,  Beom-Seok Cho ,  Hee-Hwan Choe

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/336

CPC分类号： H01L29/78669 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/456 ,  H01L29/4908

摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.

摘要翻译： 公开了一种LCD装置的薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。 将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。 之后，在约200〜约350℃进行热处理，得到硅化镍层。 由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

公开(公告)号：US20090191698A1

公开(公告)日：2009-07-30

申请号：US12417151

申请日：2009-04-02

申请人： Je-hun Lee ,  Chang-ob Jeong ,  Jin-kwan Kim ,  Yang-bo Bae ,  Beom-seok Cho ,  Jun-hyung Souk

发明人： Je-hun Lee ,  Chang-ob Jeong ,  Jin-kwan Kim ,  Yang-bo Bae ,  Beom-seok Cho ,  Jun-hyung Souk

IPC分类号： H01L21/28

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/4908 ,  H01L51/0021

摘要： Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer.Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.

摘要翻译： 公开了诸如包括铝层的TFT阵列面板和形成在铝层上的钼层的显示部分。 钼层的厚度可以为铝层的厚度的约10％至约40％。 结果，铝层的顶表面可以具有大约等于钼层的底表面的宽度。 因此，本发明的一个方面是提供一种TFT阵列面板，其包括在其上减少或消除铝突起的铝布线。