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    Thin film transistor substrate and method of fabricating the same
    4.
    发明授权
    Thin film transistor substrate and method of fabricating the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US08558230B2

    公开(公告)日：2013-10-15

    申请号：US12756323

    申请日：2010-04-08

    申请人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

    发明人： Dong-Hoon Lee ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hee-Tae Kim ,  Chang-Oh Jeong ,  Pil-Sang Yun ,  Ki-Won Kim

    IPC分类号： H01L29/04 ,  H01L29/10

    CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/7869

    摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

    摘要翻译： 提供薄膜晶体管（TFT）基板及其制造方法。 薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。 薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。 氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。 数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。 阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

    LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF 审中-公开
    液晶显示及其制造方法

    公开(公告)号：US20130250220A1

    公开(公告)日：2013-09-26

    申请号：US13597942

    申请日：2012-08-29

    申请人： Chang Ok KIM ,  Yeun Tae KIM ,  Hyang-Shik KONG ,  Jae Sul AN ,  Hyeong Suk YOO ,  Chang Oh JEONG

    发明人： Chang Ok KIM ,  Yeun Tae KIM ,  Hyang-Shik KONG ,  Jae Sul AN ,  Hyeong Suk YOO ,  Chang Oh JEONG

    IPC分类号： G02F1/1337 ,  H01L33/50

    CPC分类号： G02F1/1341

    摘要： A liquid crystal display includes: a substrate; a thin film transistor on the substrate; a pixel electrode which is connected to a terminal of the thin film transistor; a microcavity layer on the pixel electrode and including an injection hole through which material is provided to the microcavity layer; a supporting layer on the microcavity layer; and a capping layer on the supporting layer. The capping layer covers the injection hole, and the supporting layer includes silicon oxycarbide (SiOC).

    摘要翻译： 液晶显示器包括：基板; 衬底上的薄膜晶体管; 连接到所述薄膜晶体管的端子的像素电极; 所述像素电极上的微腔层包括注入孔，通过所述注入孔向所述微腔层提供材料; 微腔层上的支撑层; 和支撑层上的覆盖层。 覆盖层覆盖注入孔，支撑层包括碳氧化硅（SiOC）。

    Method of fabricating thin-film transistor substrate
    6.
    发明授权
    Method of fabricating thin-film transistor substrate 有权
    制造薄膜晶体管基板的方法

    公开(公告)号：US08524549B2

    公开(公告)日：2013-09-03

    申请号：US13191833

    申请日：2011-07-27

    申请人： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Il-Yong Yoon

    发明人： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Il-Yong Yoon

    IPC分类号： H01L21/268

    CPC分类号： H01L21/268 ,  H01L21/02675 ,  H01L21/02678 ,  H01L27/1229 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78696

    摘要： A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.

    摘要翻译： 制造薄膜晶体管（TFT）基板的方法包括在基板上形成栅电极; 在栅电极上形成绝缘膜; 在所述绝缘膜上形成非晶半导体图案; 以及形成与所述非晶半导体图案上的漏电极分离的源电极; 在所述非晶半导体图案，所述源电极和所述漏电极上形成包括突起的聚光层; 以及通过向所述聚光层的所述突起照射光而使所述非晶半导体图案的至少一部分结晶。

    Method for manufacturing display panel
    8.
    发明授权
    Method for manufacturing display panel 失效
    显示面板制造方法

    公开(公告)号：US08492190B2

    公开(公告)日：2013-07-23

    申请号：US13472716

    申请日：2012-05-16

    申请人： Joo-Ae Youn ,  Yang-Ho Bae ,  Chang-Oh Jeong ,  Chong-Chul Chai ,  Pil-Sang Yun ,  Honglong Ning ,  Byeong-Beom Kim

    发明人： Joo-Ae Youn ,  Yang-Ho Bae ,  Chang-Oh Jeong ,  Chong-Chul Chai ,  Pil-Sang Yun ,  Honglong Ning ,  Byeong-Beom Kim

    IPC分类号： H01L29/04

    CPC分类号： H01L33/0041 ,  H01L27/124 ,  H01L29/458

    摘要： A method for manufacturing a display panel includes; formation of a lower gate line, disposal of a semiconductor on the lower gate line, disposal of a lower data line substantially perpendicular to the lower gate line, disposal of an insulating layer having a plurality of trenches exposing the lower gate line and the lower data line on the lower data line, disposal of an upper gate line directly on the lower gate line and within the plurality of trenches, and disposal of an upper data line directly on the lower data line and within the plurality of trenches.

    摘要翻译： 一种显示面板的制造方法， 形成下栅极线，在下栅极线上处理半导体，处理基本上垂直于下栅极线的下数据线，处理具有暴露下栅极线的多个沟槽的绝缘层和较低数据 在下数据线上行，直接在下栅极线上和多个沟槽内处理上栅极线，以及直接在下数据线上和多个沟槽内处置上数据线。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 失效
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20120315731A1

    公开(公告)日：2012-12-13

    申请号：US13523767

    申请日：2012-06-14

    申请人： Je-Hun LEE ,  Sung-Jin KIM ,  Hee-Joon KIM ,  Chang-Oh JEONG

    发明人： Je-Hun LEE ,  Sung-Jin KIM ,  Hee-Joon KIM ,  Chang-Oh JEONG

    IPC分类号： H01L21/336

    CPC分类号： G02F1/13439 ,  G02F1/13458 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

    摘要： A thin film transistor array panel is provided, which includes a plurality of gate line, a plurality of common electrodes, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn is not produced on the surfaces of the common electrode.

    摘要翻译： 提供薄膜晶体管阵列面板，其包括多个栅极线，多个公共电极，覆盖栅极线和公共电极的栅极绝缘层，形成在栅极绝缘层上的多个半导体层，多个 包括多个源电极并形成在半导体层上的数据线，形成在半导体层上的多个漏电极以及与公共电极重叠并连接到漏电极的多个像素电极。 由于公共电极由ITON，IZON或者-IONON制成，或者是将双重层的ITO / ITON，IZO / IZON或者a-ITO / a-ITON，当注入H 2或SiH 4以形成氮化硅时 SiNX）层，在公共电极的表面上不产生不透明金属Sn或Zn。