发明授权
- 专利标题: Memory operation testing
- 专利标题(中): 内存操作测试
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申请号: US12164755申请日: 2008-06-30
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公开(公告)号: US07852692B2公开(公告)日: 2010-12-14
- 发明人: Shayan Zhang , Jack M. Higman , Michael D. Snyder
- 申请人: Shayan Zhang , Jack M. Higman , Michael D. Snyder
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 David G. Dolezal; James L. Clingan, Jr.
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
Test circuitry for determining whether a memory can operate at a lower operating voltage. The test circuitry includes a sense circuit having a delayed sensing characteristic as compared to other sense amplifier circuits of the memory. With this circuitry, the test circuitry can determine if the sense circuit can provide valid data under more severe sensing conditions. In one example, the sense circuit includes a delay circuit in the sense enable signal path. If sense circuit can provide data at more server operating conditions, then the memory operating voltage can be lowered.
公开/授权文献
- US20090323446A1 MEMORY OPERATION TESTING 公开/授权日:2009-12-31
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