A ridge stripe semiconductor laser device includes a first conductivity type cladding layer 103, an active layer 104, a second conductivity type first cladding layer 105, a second conductivity type second cladding layer 108 in a ridge-shaped stripe for confining light in a horizontal transverse direction, and a current blocking layer 107 formed in a region except for at least a part on a ridge that are disposed on a semiconductor substrate 102. In a cross-section perpendicular to a stripe direction of the ridge, each of both lateral surfaces of the ridge includes a first surface 118 that is substantially perpendicular to a surface of the semiconductor substrate and extends downward from an upper end of the ridge, and a second surface 119 that is formed of a substantially linear skirt portion inclined surface that is inclined obliquely downward to an outside of the ridge in a skirt portion of the ridge. The first surface and the second surface are connected directly, or connected via a third intermediate surface. A (111) plane of a semiconductor constituting the second cladding layer is exposed to the second surface. The present invention provides a high power semiconductor laser device with a high kink level and a low operating current.