公开(公告)号：US20120099614A1

公开(公告)日：2012-04-26

申请号：US13275653

申请日：2011-10-18

申请人： Tomohiro YAMAZAKI ,  Akiyoshi KUDO ,  Kouji MAKITA

发明人： Tomohiro YAMAZAKI ,  Akiyoshi KUDO ,  Kouji MAKITA

IPC分类号： H01S5/026

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/3201 ,  H01S5/34333

摘要： A semiconductor laser device of the present invention includes: a substrate; a cladding layer of a first conductivity type formed above one of surfaces of the substrate; an active layer formed above the cladding layer of the first conductivity type; a cladding layer of a second conductivity type formed above the active layer, and having a ridge and a planar portion; a dielectric film formed on a lower portion of a side surface of the ridge and on the planar portion; a first electrode formed on an other one of the surfaces of the substrate; a second electrode formed above the ridge; a third electrode formed over the second electrode and the dielectric film to cover the ridge and the planar portion; and a cavity provided between the third electrode and at least a part of the side surface of the ridge.

摘要翻译： 本发明的半导体激光装置包括：基板; 形成在所述基板的一个表面上方的第一导电类型的覆层; 形成在第一导电类型的包覆层上方的有源层; 形成在有源层上方的具有第二导电类型的包覆层，并具有脊和平面部分; 电介质膜，形成在所述脊的侧面的下部并且在所述平面部上; 形成在所述基板的另一个表面上的第一电极; 在脊上形成的第二电极; 形成在所述第二电极和所述电介质膜上以覆盖所述脊和所述平面部分的第三电极; 以及设置在第三电极和脊的侧表面的至少一部分之间的空腔。

公开(公告)号：US20110057220A1

公开(公告)日：2011-03-10

申请号：US12790247

申请日：2010-05-28

申请人： Atsunori MOCHIDA ,  Kouji MAKITA ,  Yoshiaki HASEGAWA

发明人： Atsunori MOCHIDA ,  Kouji MAKITA ,  Yoshiaki HASEGAWA

IPC分类号： H01L33/46

CPC分类号： H01S5/0282 ,  B82Y20/00 ,  H01S5/34333

摘要： A nitride semiconductor light-emitting device includes a laminate structure formed of a plurality of nitride semiconductor layers including a light-emitting layer, and having cavity facets facing each other, a first protection film made of AlN, formed over a light-emitting facet of the cavity facets, and a second protection film made of Al2O3 having a refractive index of n1, formed thereon. The second protection film has a crystallized surface at least in a region facing a light-emitting region on the cavity facets; the thickness (t) of the second protection film satisfies λ/(2·n1)

摘要翻译： 氮化物半导体发光器件包括由包括发光层的多个氮化物半导体层形成并且具有彼此面对的腔面的层叠结构，由AlN制成的第一保护膜形成在发光层的发光面上 在其上形成有腔面和由Al 2 O 3构成的具有折射率n1的第二保护膜。 至少在面向腔面上的发光区域的区域中，第二保护膜具有结晶化表面; 第二保护膜的厚度（t）满足λ/（2·n1）

公开(公告)号：US07585689B2

公开(公告)日：2009-09-08

申请号：US12196902

申请日：2008-08-22

申请人： Takayuki Kashima ,  Keiji Ito ,  Kouji Makita

发明人： Takayuki Kashima ,  Keiji Ito ,  Kouji Makita

IPC分类号： H01L21/00

CPC分类号： H01S5/4025 ,  H01S5/0201 ,  H01S5/2201

摘要： A method for manufacturing a semiconductor laser device in which a first conductivity type cladding layer, and active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth, the second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of a resonator length is within the tolerance in a simple manner.

摘要翻译： 一种半导体激光器件的制造方法，其中通过晶体生长在半导体衬底上依次层叠第一导电型包覆层和有源层，第二导电型第一包层和第二导电型第二包覆层， 将第二导电型第二包覆层加工成多个条状的脊状结构部，通过在与脊部结构部的长度方向正交的方向上断裂而形成激光条。 根据该方法，可以提供一种制造半导体激光器件的方法和用于在制造过程中检查半导体激光棒的方法，其能够确定每个芯片是否谐振器长度的偏差是否在 容忍以简单的方式。

公开(公告)号：US20090080483A1

公开(公告)日：2009-03-26

申请号：US12166688

申请日：2008-07-02

申请人： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

发明人： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

IPC分类号： H01S5/42 ,  H01S5/00 ,  H01L21/02

CPC分类号： H01S5/4031 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/173

摘要： A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.

摘要翻译： 半导体激光装置包括第一半导体激光元件和第二半导体激光元件。 第一半导体激光元件具有第一端面窗结构，该第一端面窗结构是包括在端面附近形成的第一杂质的区域，第二半导体激光元件具有第二端面窗结构，该第二端面窗结构是包括形成在端面附近的第二杂质的区域 。 从第一有源层的下端到第一端面窗结构的下端的距离比从第二活性层的下端到第二端面窗结构的下端的距离短。

公开(公告)号：US20090053838A1

公开(公告)日：2009-02-26

申请号：US12196902

申请日：2008-08-22

申请人： Takayuki KASHIMA ,  Keiji ITO ,  Kouji MAKITA

发明人： Takayuki KASHIMA ,  Keiji ITO ,  Kouji MAKITA

IPC分类号： H01L21/02

CPC分类号： H01S5/4025 ,  H01S5/0201 ,  H01S5/2201

摘要： A first conductivity type cladding layer, an active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth. The second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. A plurality of columns of the ridge structure portions that are aligned in the longitudinal direction of the ridge structure portions at predetermined intervals are arranged. The arrangement is such that each of the columns is displaced from the adjacent column in the longitudinal direction of the ridge structure portions so that an end portion of each of the ridge structure portions and an end portion of the adjacent ridge structure portion overlap each other in the longitudinal direction of the ridge structure portions. A region where the end portion of each of the ridge structure portions and the end portion of the adjacent ridge structure portion overlap each other is cleaved. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of the resonator length is within the tolerance in a simple manner.

摘要翻译： 依次通过晶体生长将第一导电型包覆层，有源层，第二导电型第一包层和第二导电型第二包覆层依次层叠。 将第二导电型第二包覆层加工成多个条状的脊状结构部，通过在与脊部结构部的长度方向正交的方向上断裂而形成激光条。 布置有以脊部结构部分的纵向方向以预定间隔对齐的多个脊状结构部分的列。 这样的布置使得每个列在脊结构部分的纵向方向上从相邻列移位，使得每个脊结构部分的端部和相邻脊结构部分的端部彼此重叠 脊结构部分的纵向方向。 其中每个脊结构部分的端部和相邻脊部结构部分的端部彼此重叠的区域被切割。 根据该方法，可以提供一种制造半导体激光器件的方法和用于在制造过程中检查半导体激光棒的方法，该方法能够确定每个芯片的谐振器长度的偏差是否在 容忍以简单的方式。

公开(公告)号：US07369593B2

公开(公告)日：2008-05-06

申请号：US10920545

申请日：2004-08-17

申请人： Kouji Makita ,  Hideto Adachi

发明人： Kouji Makita ,  Hideto Adachi

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/2222

摘要： The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.

摘要翻译： 本发明的半导体激光器包括：第一导电型包覆层，具有沿共振器方向延伸的至少一个脊结构的第二导电型包覆层，设置在两个覆层之间的有源层和电流阻塞 层，以覆盖脊结构的至少一个侧面。 电流阻挡层包括氢化的第一介电膜。 在具有由电介质形成的电流阻挡层的结构中，光限制效率提高，激光振荡的阈值降低，并且提高了在高温和高功率下的振荡期间的电流特性。

公开(公告)号：US20050117619A1

公开(公告)日：2005-06-02

申请号：US10994436

申请日：2004-11-23

申请人： Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

发明人： Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

IPC分类号： H01S5/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/222 ,  H01S5/32325

摘要： The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; an n-type AlInP block layer 109, has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.

摘要翻译： 本发明旨在提供一种具有容易制造，令人满意的温度特性以及高速响应特性的结构的半导体激光器件，它包括：n型GaAs衬底101; 形成在n型GaAs衬底101上的n型AlGaInP包层102; 非掺杂量子阱有源层103; p型AlGaInP第一包覆层104; p型GaInP蚀刻停止层105; p型AlGaInP第二包覆层106; p型GaInP覆盖层107; p型GaAs接触层108; n型AlInP阻挡层109具有形成在脊部两侧的脊部和凸部，并且p型GaAs接触层108仅形成在脊部上。

公开(公告)号：US20050041710A1

公开(公告)日：2005-02-24

申请号：US10920545

申请日：2004-08-17

申请人： Kouji Makita ,  Hideto Adachi

发明人： Kouji Makita ,  Hideto Adachi

IPC分类号： C23C14/35 ,  C23C16/511 ,  H01L21/314 ,  H01S5/22 ,  H01S5/30 ,  H01S5/00

CPC分类号： H01S5/22 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/2222

摘要： The semiconductor laser of the present invention includes a first conductivity-type cladding layer, a second conductivity-type cladding layer having at least one ridge structure extending in the direction of a resonator, an active layer disposed between the two cladding layers and a current blocking layer provided so as to cover at least a side face of the ridge structure. The current blocking layer includes a hydrogenated first dielectric film. In the structure having the current blocking layer formed of a dielectric, a light confining efficiency is enhanced, a threshold value of laser oscillation decreases, and current properties during the oscillation at a high temperature and with a high power are improved.

摘要翻译： 本发明的半导体激光器包括：第一导电型包覆层，具有沿共振器方向延伸的至少一个脊结构的第二导电型包覆层，设置在两个覆层之间的有源层和电流阻塞 层，以覆盖脊结构的至少一个侧面。 电流阻挡层包括氢化的第一介电膜。 在具有由电介质形成的电流阻挡层的结构中，光限制效率提高，激光振荡的阈值降低，并且提高了在高温和高功率下的振荡期间的电流特性。

公开(公告)号：US20110292959A1

公开(公告)日：2011-12-01

申请号：US13030627

申请日：2011-02-18

申请人： Toshitaka Shimamoto ,  Naoto Shimada ,  Kouji Makita ,  Yoshiaki Hasegawa

发明人： Toshitaka Shimamoto ,  Naoto Shimada ,  Kouji Makita ,  Yoshiaki Hasegawa

IPC分类号： H01S5/22 ,  H01L21/78

CPC分类号： H01S5/0202 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/34333

摘要： A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a resonator surface which is an edge surface thereof intersecting the ridge stripe portion and a second scribed level-different portion formed in each side surface thereof extending in parallel to the ridge stripe portion, the first scribed level-difference portion is located between the second scribed level-different portion and the ridge stripe portion, a cross-sectional shape of the first scribe level-different portion taken along the resonator surface is polygonal, and one of angles of inclined parts which is located closer to an associated one of the ridge stripe portions is smaller than the other one of the angles located closer to an associated one of the second scribed portions, the inclined parts being sides of the polygonal shape.

摘要翻译： 半导体激光装置包括具有棱条部的半导体层叠膜。 半导体层叠膜包括形成在与脊条部分相交的边缘表面的谐振器表面中的第一划刻水平面不同部分和形成在其平行于脊条部分的每个侧表面中的第二划刻水平不同部分 第一划刻水平差部分位于第二划刻水平不同部分和脊条部分之间，沿着谐振器表面截取的第一划线水平不同部分的横截面形状是多边形，并且 位于更靠近相关联的一个棱条部分的倾斜部分小于位于更靠近相关联的一个第二划线部分的另一个角度，倾斜部分是多边形形状的侧面。

公开(公告)号：US07852898B2

公开(公告)日：2010-12-14

申请号：US12235320

申请日：2008-09-22

申请人： Takeshi Yokoyama ,  Takayuki Kashima ,  Kouji Makita

发明人： Takeshi Yokoyama ,  Takayuki Kashima ,  Kouji Makita

IPC分类号： H01S5/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/32316 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

摘要翻译： 在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一 上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。 在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。 端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。 在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。