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发明授权
US07855428B2 Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer 有权
在浅沟槽隔离结构和掩埋氧化物层之间的界面处的导电衬垫

Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer
摘要：
The invention relates to a design structure, and more particularly, to a design structure for a conductive liner for rad hard total dose immunity and a structure thereof. The structure includes at least one shallow trench isolation structure having oxide material and formed in an SOI. A dielectric liner is formed at an interface of the SOI within the at least one shallow trench isolation structure. A metal or metal alloy layer is formed in the at least one shallow trench isolation structure and between the dielectric liner and the oxide material.
摘要（中）：

本发明涉及一种设计结构，更具体地，涉及一种用于辐射硬总剂量免疫的导电衬垫的设计结构及其结构。 该结构包括至少一个具有氧化物材料并在SOI中形成的浅沟槽隔离结构。 在所述至少一个浅沟槽隔离结构内的SOI的界面处形成电介质衬垫。 在所述至少一个浅沟槽隔离结构中以及所述电介质衬垫和所述氧化物材料之间形成金属或金属合金层。

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