发明授权
US07863135B2 Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
有权
非易失性半导体存储器件的制造方法以及非易失性半导体存储器件
- 专利标题： Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件的制造方法以及非易失性半导体存储器件
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申请号： US12706668申请日： 2010-02-16
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公开(公告)号： US07863135B2公开(公告)日： 2011-01-04
- 发明人: Takeshi Sakai , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
- 申请人： Takeshi Sakai , Yasushi Ishii , Tsutomu Okazaki , Masaru Nakamichi , Toshikazu Matsui , Kyoya Nitta , Satoru Machida , Munekatsu Nakagawa , Yuichi Tsukada
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2004-193554 20040630
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.
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