Invention Grant
- Patent Title: Method for fabricating a capacitor
- Patent Title (中): 制造电容器的方法
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Application No.: US11223800Application Date: 2005-09-09
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Publication No.: US07863149B2Publication Date: 2011-01-04
- Inventor: Srivatsa Kundalgurki , Peter Moll , Dirk Manger , Kristin Schupke , Till Schloesser
- Applicant: Srivatsa Kundalgurki , Peter Moll , Dirk Manger , Kristin Schupke , Till Schloesser
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Priority: DE102004044678 20040909
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into the auxiliary layer (40), and the electrode structure of the capacitor is formed in the recess. As an example, the auxiliary layer can be a semiconductor layer (40).
Public/Granted literature
- US20060079049A1 Method for fabricating a capacitor Public/Granted day:2006-04-13
Information query
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