Invention Grant
- Patent Title: Sub-volt bandgap voltage reference with buffered CTAT bias
- Patent Title (中): 具有缓冲CTAT偏置的亚电压带隙电压参考
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Application No.: US12350899Application Date: 2009-01-08
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Publication No.: US07863884B1Publication Date: 2011-01-04
- Inventor: Scott Douglas Carper
- Applicant: Scott Douglas Carper
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Fogg & Powers LLC
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/20

Abstract:
Circuits, methods, and apparatus that provide voltage references having a temperature independent output voltage that is less then the bandgap of silicon. The temperature coefficient and absolute voltage can be independently adjusted. One example generates two voltages, the first of which is proportional-to-absolute temperature and the second of which is complementary-to-absolute temperature. These voltages are placed across a first resistor. The first resistor is further connected to a second resistor to form a resistor divider. The resistor divider provides a reduced voltage that is below that bandgap of silicon. The temperature coefficient of the reference voltage provided by the resistor divider can be set by adjusting the first resistor. The absolute voltage provided can be set by adjusting the second resistor.
Information query
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