发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11869951申请日： 2007-10-10
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公开(公告)号： US07867907B2公开(公告)日： 2011-01-11
- 发明人: Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
- 申请人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
- 申请人地址： JP
- 专利权人： Semiconductor Energy laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP Welsh Katz
- 优先权： JP2006-282684 20061017
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.
公开/授权文献
- US20080087629A1 Method for Manufacturing Semiconductor Device 公开/授权日：2008-04-17
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