发明授权
US07875937B2 Semiconductor device with a high-k gate dielectric and a metal gate electrode
有权
具有高k栅极电介质和金属栅电极的半导体器件
- 专利标题： Semiconductor device with a high-k gate dielectric and a metal gate electrode
- 专利标题（中）： 具有高k栅极电介质和金属栅电极的半导体器件
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申请号： US12287308申请日： 2008-10-07
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公开(公告)号： US07875937B2公开(公告)日： 2011-01-25
- 发明人: Matthew V. Metz , Suman Datta , Mark L. Doczy , Justin K. Brask , Jack Kavalieros , Robert S. Chau
- 申请人： Matthew V. Metz , Suman Datta , Mark L. Doczy , Justin K. Brask , Jack Kavalieros , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Kenneth A. Nelson
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed on a substrate that applies strain to the high-k gate dielectric layer, and a metal gate electrode that is formed on the high-k gate dielectric layer.
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