发明授权
- 专利标题： High-temperature solder, high-temperature solder paste and power semiconductor using same
- 专利标题（中）： 高温焊料，高温焊膏和功率半导体使用相同
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申请号： US11633419申请日： 2006-12-05
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公开(公告)号： US07879455B2公开(公告)日： 2011-02-01
- 发明人: Ryoichi Kajiwara , Kazutoshi Itou
- 申请人： Ryoichi Kajiwara , Kazutoshi Itou
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2005-350105 20051205
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; B23K35/26 ; C22C13/02
摘要：
The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %≦Sb/(Sn+Sb)≦48 wt %, 5 wt %≦Ag