公开(公告)号：US07608917B2

公开(公告)日：2009-10-27

申请号：US11749211

申请日：2007-05-16

申请人： Ryoichi Kajiwara ,  Kazuhiro Suzuki ,  Toshiaki Ishii ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Kazuhiro Suzuki ,  Toshiaki Ishii ,  Kazutoshi Itou

IPC分类号： H01L23/02 ,  H01L23/10

CPC分类号： H05K3/284 ,  H01L23/16 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49575 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/33 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/0058 ,  H05K2201/0715 ,  H05K2201/10166 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module and an inverter apparatus in which a device or a joining part is not mechanically damaged even when the temperature in use becomes a high temperature in the range of 175 to 250° C., resulting in excellent reliability at high temperature retaining test and thermal cycling test. Low thermal expansion ceramic substrates are disposed above and below the device. A material having a coefficient of thermal expansion of 10 ppm/K or less is disposed between the ceramic substrates. In addition, an inorganic material having a coefficient of thermal expansion in the range of 2 to 6 ppm/K or less is disposed around the device.

摘要翻译： 功率半导体模块和逆变器装置，即使在使用温度在175〜250℃的范围内的高温下，器件或接合部也不会机械损坏，从而在高温保持试验中具有优异的可靠性 和热循环试验。 低热膨胀陶瓷衬底设置在器件的上方和下方。 在陶瓷基板之间设置具有10ppm / K以下的热膨胀系数的材料。 此外，在该装置的周围设置热膨胀系数为2〜6ppm / K以下的无机材料。

公开(公告)号：US08313983B2

公开(公告)日：2012-11-20

申请号：US13108430

申请日：2011-05-16

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

IPC分类号： H01L21/44

CPC分类号： H01L23/49582 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49586 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/056 ,  H05K3/28 ,  H05K2201/0175 ,  H05K2201/0195 ,  H05K2203/121 ,  Y10T428/12493 ,  Y10T428/12868 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012

摘要： A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

摘要翻译： 树脂封装半导体器件的制造方法包括以下步骤：（1）将半导体器件芯片接合到布线基板的第一电连接金属端子; （2）经由电连接器电连接半导体器件的电极和布线基板的第二电连接金属端子; （3）通过将溶液施加到组件的表面并烘烤所施加的溶液来表面处理这样的组件; 和（4）将绝缘包封树脂传递模塑到表面处理的组件上。

公开(公告)号：US20070267739A1

公开(公告)日：2007-11-22

申请号：US11749211

申请日：2007-05-16

申请人： Ryoichi Kajiwara ,  Kazuhiro Suzuki ,  Toshiaki Ishii ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Kazuhiro Suzuki ,  Toshiaki Ishii ,  Kazutoshi Itou

IPC分类号： H01L23/34

CPC分类号： H05K3/284 ,  H01L23/16 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49575 ,  H01L23/49844 ,  H01L23/5385 ,  H01L24/33 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/0058 ,  H05K2201/0715 ,  H05K2201/10166 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module and an inverter apparatus in which a device or a joining part is not mechanically damaged even when the temperature in use becomes a high temperature in the range of 175 to 250° C., resulting in excellent reliability at high temperature retaining test and thermal cycling test. Low thermal expansion ceramic substrates are disposed above and below the device. A material having a coefficient of thermal expansion of 10 ppm/K or less is disposed between the ceramic substrates. In addition, an inorganic material having a coefficient of thermal expansion in the range of 2 to 6 ppm/K or less is disposed around the device.

摘要翻译： 功率半导体模块和逆变器装置，即使在使用温度在175〜250℃的范围内的高温下，器件或接合部也不会机械损坏，从而在高温保持试验中具有优异的可靠性 和热循环试验。 低热膨胀陶瓷衬底设置在器件的上方和下方。 在陶瓷基板之间设置具有10ppm / K以下的热膨胀系数的材料。 此外，在该装置的周围设置热膨胀系数为2〜6ppm / K以下的无机材料。

公开(公告)号：US20090197375A1

公开(公告)日：2009-08-06

申请号：US12320559

申请日：2009-01-29

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

IPC分类号： H01L21/02 ,  B05D3/02 ,  B05D3/06 ,  H05H1/00 ,  B32B15/01

CPC分类号： H01L23/49582 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49586 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/056 ,  H05K3/28 ,  H05K2201/0175 ,  H05K2201/0195 ,  H05K2203/121 ,  Y10T428/12493 ,  Y10T428/12868 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012

摘要： A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

摘要翻译： 根据本发明的金属基/聚合物 - 树脂结合结构体的制造方法包括以下步骤：（1）向金属基材的表面施加含有可在350℃分解的有机金属化合物的溶液。 或更低; （2）在氧化气氛中烘烤涂布的溶液，在金属基材的表面形成含有有机金属化合物的金属的氧化物的涂层; （3）在涂层上提供聚合物树脂; 和（4）硬化聚合物树脂以提供金属基/聚合物 - 树脂结合体。

公开(公告)号：US06784554B2

公开(公告)日：2004-08-31

申请号：US10321567

申请日：2002-12-18

申请人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Masayoshi Shinoda ,  Akihiko Narisawa ,  Asao Nishimura ,  Toshiaki Morita ,  Kazuya Takahashi ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Masahiro Koizumi ,  Masayoshi Shinoda ,  Akihiko Narisawa ,  Asao Nishimura ,  Toshiaki Morita ,  Kazuya Takahashi ,  Kazutoshi Itou

IPC分类号： H01L2348

CPC分类号： H01L24/16 ,  H01L24/02 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K3/244 ,  H05K3/4602 ,  H01L2924/00

摘要： In a semiconductor device in which an LSI chip comprising electrodes with a 100 &mgr;m pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 &mgr;m or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150° C. on the side of the chip, a bonding load of ½S×100 MPa to S×180 MPa (S: contact area between bump and chip), a loading mode increasing during bonding, and supersonic application time of 50 to 500 ms.

摘要翻译： 在其中包括具有100mum间距的电极和50个或更多个引脚的电极的LSI芯片直接安装在有机基板上的半导体器件中，提供了优良的耐焊接回流性能，温度 半导体器件的循环可靠性和高温/高湿度可靠性。 电极在基板的连接端子的最上表面处的芯片的Au凸块和Au膜通过Au / Au金属接合直接倒装芯片接合，并且Au凸块的接合部分的伸长率为2μm以上。 获得接合结构的方法包括在溅射清洗后10分钟内在选自室温一侧的接合条件下在室温至室温至150℃之间的接合条件下将两个接合表面进行超声波接合的方法 芯片的接合负载为1/2S×100MPa至Sx180MPa（S：凸点与芯片之间的接触面积），接合期间的负载模式增加，超音速施加时间为50〜500ms。

公开(公告)号：US08643185B2

公开(公告)日：2014-02-04

申请号：US12246811

申请日：2008-10-07

申请人： Ryoichi Kajiwara ,  Kazutoshi Itou ,  Hiroi Oka ,  Takuya Nakajo ,  Yuichi Yato

发明人： Ryoichi Kajiwara ,  Kazutoshi Itou ,  Hiroi Oka ,  Takuya Nakajo ,  Yuichi Yato

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01B1/22

CPC分类号： H01L23/49562 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/16 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/8184 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/351 ,  H05K3/321 ,  H05K2201/0116 ,  H05K2201/0218 ,  H05K2201/0272 ,  H05K2201/10636 ,  H05K2203/1131 ,  H05K2203/121 ,  H05K2203/125 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.

摘要翻译： 芯片接合部分由具有约15μm至200μm的最大粒径和Ag的粘合剂层的良好导电的Cu金属粉末金属地结合，并且微孔均匀地分散在接合层中。 利用这种结构，可以在不使用铅的情况下确保约260℃的回流电阻和热循环试验下的可靠性。

公开(公告)号：US20110223720A1

公开(公告)日：2011-09-15

申请号：US13108430

申请日：2011-05-16

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

IPC分类号： H01L21/50

CPC分类号： H01L23/49582 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49586 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/056 ,  H05K3/28 ,  H05K2201/0175 ,  H05K2201/0195 ,  H05K2203/121 ,  Y10T428/12493 ,  Y10T428/12868 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012

摘要： A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

摘要翻译： 树脂封装半导体器件的制造方法包括以下步骤：（1）将半导体器件芯片接合到布线基板的第一电连接金属端子; （2）经由电连接器电连接半导体器件的电极和布线基板的第二电连接金属端子; （3）通过将溶液施加到组件的表面并烘烤所施加的溶液来表面处理这样的组件; 和（4）将绝缘包封树脂传递模塑到表面处理的组件上。

公开(公告)号：US07879455B2

公开(公告)日：2011-02-01

申请号：US11633419

申请日：2006-12-05

申请人： Ryoichi Kajiwara ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Kazutoshi Itou

IPC分类号： H01L23/48 ,  B23K35/26 ,  C22C13/02

CPC分类号： C22C13/02 ,  B23K35/02 ,  B23K35/025 ,  B23K35/22 ,  B23K35/262 ,  B23K35/3006 ,  B23K35/302 ,  H01L23/49513 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/376 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81097 ,  H01L2224/81805 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83097 ,  H01L2224/83203 ,  H01L2224/83211 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/20108 ,  H01L2924/30105 ,  H01L2924/351 ,  Y10T428/12528 ,  Y10T428/12708 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %≦Sb/(Sn+Sb)≦48 wt %, 5 wt %≦Ag

摘要翻译： 本发明旨在提供一种使用高温无铅焊料的功率半导体器件，具有280℃以上的耐热性的高温无铅焊料以及400℃下的结合性 或更低，焊料的可供应性和润湿性优异，以及高温存储的可靠性和温度循环的可靠性。 在根据本发明的功率半导体器件中，半导体元件和金属电极构件通过包含Sn，Sb，Ag和Cu的高温焊料作为主要构成元素彼此接合，而其余的不可避免的 杂质元素，其中高温焊料材料包含42重量％＆lt; Sb;（Sn + Sb）＆nlE; 48重量％，5重量％＆lt; NE; Ag <20重量％，3重量％＆lt; 和Ag + Cu＆nlE; 25wt％。

公开(公告)号：US07964975B2

公开(公告)日：2011-06-21

申请号：US12320559

申请日：2009-01-29

申请人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

发明人： Ryoichi Kajiwara ,  Shigehisa Motowaki ,  Kazutoshi Itou ,  Hiroshi Hozoji

IPC分类号： H01L23/48 ,  B05D3/02

CPC分类号： H01L23/49582 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49586 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29116 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/056 ,  H05K3/28 ,  H05K2201/0175 ,  H05K2201/0195 ,  H05K2203/121 ,  Y10T428/12493 ,  Y10T428/12868 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012

摘要： A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350° C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

摘要翻译： 根据本发明的金属基/聚合物 - 树脂结合结构体的制造方法包括以下步骤：（1）向金属基材的表面施加含有可在350℃分解的有机金属化合物的溶液。 或更低; （2）在氧化气氛中烘烤涂布的溶液，在金属基材的表面形成含有有机金属化合物的金属的氧化物的涂层; （3）在涂层上提供聚合物树脂; 和（4）硬化聚合物树脂以提供金属基/聚合物 - 树脂结合体。

公开(公告)号：US20090096100A1

公开(公告)日：2009-04-16

申请号：US12246811

申请日：2008-10-07

申请人： Ryoichi KAJIWARA ,  Kazutoshi Itou ,  Hiroi Oka ,  Takuya Nakajo ,  Yuichi Yato

发明人： Ryoichi KAJIWARA ,  Kazutoshi Itou ,  Hiroi Oka ,  Takuya Nakajo ,  Yuichi Yato

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01B1/22

CPC分类号： H01L23/49562 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/16 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/8184 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/351 ,  H05K3/321 ,  H05K2201/0116 ,  H05K2201/0218 ,  H05K2201/0272 ,  H05K2201/10636 ,  H05K2203/1131 ,  H05K2203/121 ,  H05K2203/125 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.

摘要翻译： 芯片接合部分由具有约15μm至200μm的最大粒径和Ag的粘合剂层的良好导电的Cu金属粉末金属地结合，并且微孔均匀地分散在接合层中。 利用这种结构，可以在不使用铅的情况下确保约260℃的回流电阻和热循环试验下的可靠性。