发明授权
US07880271B2 Semiconductor device with emitter contact holes in a first layer not overlaid by emitter through holes in a second layer
有权
在第一层中具有发射极接触孔的半导体器件不由第二层中的发射极通孔覆盖
- 专利标题： Semiconductor device with emitter contact holes in a first layer not overlaid by emitter through holes in a second layer
- 专利标题（中）： 在第一层中具有发射极接触孔的半导体器件不由第二层中的发射极通孔覆盖
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申请号： US12547623申请日： 2009-08-26
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公开(公告)号： US07880271B2公开(公告)日： 2011-02-01
- 发明人: Kazuya Takahashi
- 申请人： Kazuya Takahashi
- 申请人地址： JP Osaka JP Gunma
- 专利权人： Sanyo Electric Co., Ltd,Sanyo Semiconductor Co., Ltd
- 当前专利权人： Sanyo Electric Co., Ltd,Sanyo Semiconductor Co., Ltd
- 当前专利权人地址： JP Osaka JP Gunma
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2008-217105 20080826
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
Emitter contact holes formed under emitter electrodes in a first layer and emitter through holes formed thereon are arranged so as not to overlap each other, and, for each emitter electrode, the multiple emitter contact holes and the multiple emitter through holes are provided so as to be separated from each other. Thereby, the top surface of an emitter electrode in a second layer is influenced by at most only a level difference of each emitter through hole formed in an insulating film having a larger thickness, and thus the flatness of the top surface of the emitter electrode in the second layer is improved. Accordingly, fixation failure of a metal plate can be avoided.
公开/授权文献
- US20100052102A1 SEMICONDUCTOR DEVICE 公开/授权日：2010-03-04
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