发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12409979申请日： 2009-03-24
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公开(公告)号： US07883960B2公开(公告)日： 2011-02-08
- 发明人: Masatoshi Fukuda , Akiyoshi Hatada , Katsuaki Ookoshi , Kenichi Okabe , Tomonari Yamamoto
- 申请人： Masatoshi Fukuda , Akiyoshi Hatada , Katsuaki Ookoshi , Kenichi Okabe , Tomonari Yamamoto
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2008-080653 20080326
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8244 ; H01L21/8242 ; H01L21/336
摘要：
A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.
公开/授权文献
- US20090311838A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2009-12-17
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