发明授权
- 专利标题： Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam
- 专利标题（中）： 使用气体团簇离子束增加衬底中材料浸渗深度的方法
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申请号： US12020094申请日： 2008-01-25
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公开(公告)号： US07883999B2公开(公告)日： 2011-02-08
- 发明人: Yan Shao , Thomas G. Tetreault , John J. Hautala
- 申请人： Yan Shao , Thomas G. Tetreault , John J. Hautala
- 申请人地址： US MA Billerica
- 专利权人： TEL Epion Inc.
- 当前专利权人： TEL Epion Inc.
- 当前专利权人地址： US MA Billerica
- 代理机构： Wood, Herron & Evans, LLP
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.
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