发明授权
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11760092申请日: 2007-06-08
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公开(公告)号: US07884409B2公开(公告)日: 2011-02-08
- 发明人: Yoon-Hae Kim , Myoung-Hwan Oh , Myung-Soo Yeo , Hea-Yean Park
- 申请人: Yoon-Hae Kim , Myoung-Hwan Oh , Myung-Soo Yeo , Hea-Yean Park
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2006-0051510 20060608
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/94 ; H01L21/02 ; H01L23/52
摘要:
A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate, a third conductive plate, and a fourth conductive plate. At least two of the first second, third and fourth conductive plates are electrically connected and constitute at least two capacitors.
公开/授权文献
- US20080054329A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日:2008-03-06