发明授权
- 专利标题： Adaptive wordline programming bias of a phase change memory
- 专利标题（中）： 相变存储器的自适应字线编程偏置
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申请号： US11901493申请日： 2007-09-18
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公开(公告)号： US07885099B2公开(公告)日： 2011-02-08
- 发明人: Richard E. Fackenthal , Ferdinando Bedeschi , Meenatchi Jagasivamani , Ravi Annavajjhala , Enzo M. Donze
- 申请人： Richard E. Fackenthal , Ferdinando Bedeschi , Meenatchi Jagasivamani , Ravi Annavajjhala , Enzo M. Donze
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The leakage current and power consumption of phase change memories may be reduced using adaptive word line biasing. Depending on the particular voltage applied to the bitline of a programmed cell, the word lines of unselected cells may vary correspondingly. In some embodiments, the word line voltage may be caused to match the bitline voltage of the programmed cell.
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