发明授权
- 专利标题: Method of manufacturing capacitor-embedded PCB
- 专利标题(中): 制造电容器嵌入式PCB的方法
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申请号: US12081862申请日: 2008-04-22
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公开(公告)号: US07886414B2公开(公告)日: 2011-02-15
- 发明人: Woon-Chun Kim , Sung Yi , Hwa-Sun Park , Hong-Won Kim , Dae-Jun Kim , Jin-Seon Park
- 申请人: Woon-Chun Kim , Sung Yi , Hwa-Sun Park , Hong-Won Kim , Dae-Jun Kim , Jin-Seon Park
- 申请人地址: KR Suwon
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 优先权: KR10-2007-0073259 20070723; KR10-2007-0113421 20071107
- 主分类号: H01G7/00
- IPC分类号: H01G7/00
摘要:
A method of manufacturing a capacitor-embedded PCB is disclosed. The method may include fabricating a capacitor substrate having at least one inner electrode formed on one side of a dielectric layer; aligning a semi-cured insulation layer with one side of a core layer, and aligning the capacitor substrate with the semi-cured insulation layer such that the inner electrode faces the semi-cured insulation layer; and collectively stacking the core layer, the semi-cured insulation layer, and the capacitor substrate.
公开/授权文献
- US20090025195A1 Method of manufacturing capacitor-embedded PCB 公开/授权日:2009-01-29
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