发明授权
- 专利标题: Method of forming laterally distributed LEDs
- 专利标题(中): 形成横向分布式LED的方法
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申请号: US12366609申请日: 2009-02-05
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公开(公告)号: US07888152B2公开(公告)日: 2011-02-15
- 发明人: Chun-Yen Chang , Tsung-Hsi Yang , Yen-Chen Chen
- 申请人: Chun-Yen Chang , Tsung-Hsi Yang , Yen-Chen Chen
- 申请人地址: TW Hsinchu County
- 专利权人: Chun-Yen Chang
- 当前专利权人: Chun-Yen Chang
- 当前专利权人地址: TW Hsinchu County
- 代理机构: Stout, Uxa, Buyan & Mullins, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of forming laterally distributed light emitting diodes (LEDs) is disclosed. A first buffer layer with a first type of conductivity is formed on a semiconductor substrate, and a dielectric layer is formed on the first buffer layer. The dielectric layer is patterned to form a first patterned space therein, followed by forming a first active layer in the first patterned space. The dielectric layer is then patterned to form a second patterned space therein, followed by forming a second active layer in the second patterned space. Second buffer layers with a second type of conductivity are then formed on the first active layer and the second active layer. Finally, electrodes are formed on the second buffer layers and on the first buffer layer.
公开/授权文献
- US20100197060A1 Method of Forming Laterally Distributed LEDs 公开/授权日:2010-08-05
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