公开(公告)号：US07888152B2

公开(公告)日：2011-02-15

申请号：US12366609

申请日：2009-02-05

申请人： Chun-Yen Chang ,  Tsung-Hsi Yang ,  Yen-Chen Chen

发明人： Chun-Yen Chang ,  Tsung-Hsi Yang ,  Yen-Chen Chen

IPC分类号： H01L21/00

CPC分类号： H01L27/153

摘要： A method of forming laterally distributed light emitting diodes (LEDs) is disclosed. A first buffer layer with a first type of conductivity is formed on a semiconductor substrate, and a dielectric layer is formed on the first buffer layer. The dielectric layer is patterned to form a first patterned space therein, followed by forming a first active layer in the first patterned space. The dielectric layer is then patterned to form a second patterned space therein, followed by forming a second active layer in the second patterned space. Second buffer layers with a second type of conductivity are then formed on the first active layer and the second active layer. Finally, electrodes are formed on the second buffer layers and on the first buffer layer.

摘要翻译： 公开了形成横向分布式发光二极管（LED）的方法。 在半导体衬底上形成具有第一导电类型的第一缓冲层，并且在第一缓冲层上形成电介质层。 图案化电介质层以在其中形成第一图案化空间，随后在第一图案化空间中形成第一有源层。 然后对电介质层进行图案化以在其中形成第二图案化空间，随后在第二图案化空间中形成第二有源层。 然后在第一有源层和第二有源层上形成具有第二类导电性的第二缓冲层。 最后，在第二缓冲层和第一缓冲层上形成电极。

公开(公告)号：US09633982B2

公开(公告)日：2017-04-25

申请号：US14623951

申请日：2015-02-17

申请人： Chun-Yen Chang ,  GLOBALWAFERS CO., LTD.

发明人： Chun-Yen Chang

IPC分类号： H01L21/00 ,  H01L25/075 ,  H01L21/306 ,  H01L21/683 ,  H01L21/78 ,  H01L23/544 ,  H01L33/00

CPC分类号： H01L25/0753 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/78 ,  H01L21/7806 ,  H01L23/544 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486

摘要： Present disclosure provides a method for manufacturing a semiconductor device array, including (1) providing a temporary substrate; (2) forming a plurality of discrete semiconductor structures over the temporary substrate; and (3) removing a surface portion of the temporary substrate to expose a peripheral bottom surface of the discrete semiconductor structure. Present disclosure also provides a method for transferring discrete semiconductor device, including (1) detaching discrete semiconductor structures of a first type from a first temporary substrate supporting the discrete semiconductor structures of the first type by a transfer stamp; (2) carrying the discrete semiconductor structures over a target substrate by the transfer stamp; and (3) dismounting the discrete semiconductor structures of the first type from the transfer stamp to predetermined sites on the target substrate. The transfer stamp includes a plurality of protrusions, positions of the plurality of protrusions being programmable to match the predetermined sites on the target substrate.