Invention Grant
- Patent Title: Chip stacked structure and the forming method
- Patent Title (中): 芯片堆叠结构和成型方法
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Application No.: US12330790Application Date: 2008-12-09
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Publication No.: US07888172B2Publication Date: 2011-02-15
- Inventor: Cheng-Tang Huang
- Applicant: Cheng-Tang Huang
- Applicant Address: TW Hsinchu BM Hamilton
- Assignee: Chipmos Technologies Inc,Chipmos Technologies (Bermuda) Ltd
- Current Assignee: Chipmos Technologies Inc,Chipmos Technologies (Bermuda) Ltd
- Current Assignee Address: TW Hsinchu BM Hamilton
- Agency: Sinorica, LLC
- Agent Ming Chow
- Priority: TW97120849A 20080605
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/469

Abstract:
A chip package structure is provided, includes a chip that having a plurality of pads and an adhesive layer on the back side; an encapsulated structure is covered around the four sides of the chip to expose the pads, and the through holes is formed within the encapsulated structure; a patterned first protective layer is formed on the portion surface of encapsulated structure, the portion of active surface of the chips, and the pads of the chip and the through holes are to be exposed; a metal layer is formed on the portion surface of the patterned first protective layer and formed to electrically connect the pads and to fill with the through holes; the patterned second protective layer is formed on the patterned first protective layer and the portion of metal layer, and the portion surface of metal layer is to be exposed; a patterned UBM layer is formed on the exposed surface of the metal layer and the portion surface of the patterned second protective layer; and the conductive elements is formed on the patterned UBM layer and electrically connect to the metal layer.
Public/Granted literature
- US20090302448A1 Chip Stacked Structure and the Forming Method Public/Granted day:2009-12-10
Information query
IPC分类: