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    Semiconductor package structure and manufacturing method thereof
    6.
    发明授权
    Semiconductor package structure and manufacturing method thereof 有权
    半导体封装结构及其制造方法

    公开(公告)号：US09196553B2

    公开(公告)日：2015-11-24

    申请号：US13352346

    申请日：2012-01-18

    Applicant: Tsung-Jen Liao ,  Mei-Fang Peng ,  Cheng-Tang Huang

    Inventor： Tsung-Jen Liao ,  Mei-Fang Peng ,  Cheng-Tang Huang

    IPC: H01L23/60 ,  H01L23/13 ,  H01L23/498 ,  H01L25/10 ,  H01L21/683

    CPC classification number: H01L23/13 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2225/1041 ,  H01L2225/1058

    Abstract: A manufacturing method of semiconductor package structure includes: providing a first dielectric layer having multiple through holes; providing a second dielectric layer having multiple conductive vias and a chip-containing opening; laminating the second dielectric layer onto the first dielectric layer; disposing a chip in the chip-containing opening and adhering a rear surface of the chip onto the first dielectric layer exposed by the chip-containing opening; forming a redistribution circuit layer on the second dielectric layer wherein a part of the redistribution circuit layer extends from the second dielectric layer onto an active surface of the chip and the conductive vias so that the chip electrically connects the conductive vias through the partial redistribution circuit layer; forming multiple solder balls on the first dielectric layer wherein the solder balls are in the through holes and electrically connect the chip through the conductive vias and the redistribution circuit layer.

    Abstract translation: 半导体封装结构的制造方法包括：提供具有多个通孔的第一电介质层; 提供具有多个导电通孔和含芯片的开口的第二电介质层; 将第二电介质层层压到第一介电层上; 将芯片设置在含芯片的开口中并将芯片的后表面粘附到由含芯片的开口暴露的第一介质层上; 在所述第二电介质层上形成再分布电路层，其中所述再分布电路层的一部分从所述第二电介质层延伸到所述芯片的有源表面和所述导电通孔，使得所述芯片将所述导电通孔电连接到所述部分再分布电路层 ; 在第一介电层上形成多个焊球，其中焊球位于通孔中，并通过导电通孔和再分布电路层将芯片电连接。

    SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体封装结构及其制造方法

    公开(公告)号：US20130049198A1

    公开(公告)日：2013-02-28

    申请号：US13366367

    申请日：2012-02-06

    Applicant: Tsung-Jen Liao ,  Cheng-Tang Huang ,  Mei-Fang Peng

    Inventor： Tsung-Jen Liao ,  Cheng-Tang Huang ,  Mei-Fang Peng

    IPC: H01L23/48 ,  H01L21/78

    CPC classification number: H01L21/78 ,  H01L21/568 ,  H01L23/3185 ,  H01L23/48 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00

    Abstract: A method of manufacturing a semiconductor package structure is provided. A chip is provided. An active surface of the chip is disposed on a carrier. A molding compound is formed on the carrier with a metal layer disposed thereon. The metal layer has an upper and lower surface, multiple cavities formed on the upper surface and multiple protrusions formed on the lower surface and corresponding to the cavities. The protrusions are embedded in the molding compound. The metal layer is patterned to form multiple pads on a portion of the molding compound. The carrier and the molding compound are separated. Multiple through holes are formed on the molding compound exposing the protrusions. A redistribution layer is formed on the molding compound and the active surface of the chip. Multiple solder balls are formed on the redistribution layer. A portion of the solder balls are correspondingly disposed to the pads.

    Abstract translation: 提供一种制造半导体封装结构的方法。 提供了一个芯片。 芯片的有源表面设置在载体上。 在其上设置有金属层的载体上形成模塑料。 金属层具有上表面和下表面，在上表面上形成有多个空腔，并且形成在下表面上并对应于空腔的多个突起。 突起嵌入模塑料中。 金属层被图案化以在模制化合物的一部分上形成多个焊盘。 载体和模塑料分离。 在暴露突起的模塑料上形成多个通孔。 在模塑料和芯片的活性表面上形成再分布层。 在再分布层上形成多个焊球。 焊球的一部分相应地设置在焊盘上。

    SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
    半导体封装结构及其制造方法

    公开(公告)号：US20130049197A1

    公开(公告)日：2013-02-28

    申请号：US13352346

    申请日：2012-01-18

    Applicant: Tsung-Jen Liao ,  Mei-Fang Peng ,  Cheng-Tang Huang

    Inventor： Tsung-Jen Liao ,  Mei-Fang Peng ,  Cheng-Tang Huang

    IPC: H01L23/498 ,  H01L21/60

    CPC classification number: H01L23/13 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2225/1041 ,  H01L2225/1058

    Abstract: A manufacturing method of semiconductor package structure includes: providing a first dielectric layer having multiple through holes; providing a second dielectric layer having multiple conductive vias and a chip-containing opening; laminating the second dielectric layer onto the first dielectric layer; disposing a chip in the chip-containing opening and adhering a rear surface of the chip onto the first dielectric layer exposed by the chip-containing opening; forming a redistribution circuit layer on the second dielectric layer wherein a part of the redistribution circuit layer extends from the second dielectric layer onto an active surface of the chip and the conductive vias so that the chip electrically connects the conductive vias through the partial redistribution circuit layer; forming multiple solder balls on the first dielectric layer wherein the solder balls are in the through holes and electrically connect the chip through the conductive vias and the redistribution circuit layer.

    Abstract translation: 半导体封装结构的制造方法包括：提供具有多个通孔的第一电介质层; 提供具有多个导电通孔和含芯片的开口的第二电介质层; 将第二电介质层层压到第一介电层上; 将芯片设置在含芯片的开口中并将芯片的后表面粘附到由含芯片的开口暴露的第一介质层上; 在所述第二电介质层上形成再分布电路层，其中所述再分布电路层的一部分从所述第二电介质层延伸到所述芯片的有源表面和所述导电通孔，使得所述芯片将所述导电通孔电连接到所述部分再分布电路层 ; 在第一介电层上形成多个焊球，其中焊球位于通孔中，并通过导电通孔和再分布电路层将芯片电连接。

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