发明授权
US07888763B2 Backside illuminated imaging sensor with improved infrared sensitivity
有权
背面照明成像传感器，具有改善的红外灵敏度
- 专利标题： Backside illuminated imaging sensor with improved infrared sensitivity
- 专利标题（中）： 背面照明成像传感器，具有改善的红外灵敏度
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申请号： US12203858申请日： 2008-09-03
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公开(公告)号： US07888763B2公开(公告)日： 2011-02-15
- 发明人: Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
- 申请人： Yin Qian , Howard E. Rhodes , Hsin-Chih Tai , Vincent Venezia , Duli Mao
- 申请人地址： US CA Santa Clara
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman, LLP
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/00
摘要：
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
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