发明授权
US07889317B2 Immersion lithography with equalized pressure on at least projection optics component and wafer
有权
至少在投影光学部件和晶片上具有均衡压力的浸没光刻
- 专利标题： Immersion lithography with equalized pressure on at least projection optics component and wafer
- 专利标题（中）： 至少在投影光学部件和晶片上具有均衡压力的浸没光刻
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申请号： US12051572申请日： 2008-03-19
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公开(公告)号： US07889317B2公开(公告)日： 2011-02-15
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Peter H. Mitchell
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Peter H. Mitchell
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Anthony J. Canale
- 主分类号： G03B27/42
- IPC分类号： G03B27/42
摘要：
An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.