发明授权
US07892445B1 Wafer electrical discharge control using argon free dechucking gas 有权
使用无氩脱胶气体进行晶圆放电控制

Wafer electrical discharge control using argon free dechucking gas
摘要:
A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.
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