公开(公告)号：US07892445B1

公开(公告)日：2011-02-22

申请号：US11853968

申请日：2007-09-12

申请人： David Wei ,  Howard Dang ,  Masahiro Watanabe ,  Sean Kang ,  Kenji Takeshita ,  Mayumi Block ,  Stephen Sirard ,  Eric Hudson

发明人： David Wei ,  Howard Dang ,  Masahiro Watanabe ,  Sean Kang ,  Kenji Takeshita ,  Mayumi Block ,  Stephen Sirard ,  Eric Hudson

IPC分类号： B44C1/22

CPC分类号： H01L21/67069 ,  H01L21/6831

摘要： A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.

摘要翻译： 提供了通过在等离子体室中的静电电荷将具有低k电介质层的晶片脱扣保持在静电卡盘上的方法。 静电钳位电压被去除。 在等离子体室中提供基本上无氩的脱扣气体。 从等离子体室中的脱扣气体形成脱扣等离子体。 脱扣等离子体停止。

公开(公告)号：US20090068767A1

公开(公告)日：2009-03-12

申请号：US11854038

申请日：2007-09-12

申请人： Stephen Sirard ,  Mikio Nagai ,  Kenji Takeshita ,  Sridharan Srivatsan ,  Jungmin Ko

发明人： Stephen Sirard ,  Mikio Nagai ,  Kenji Takeshita ,  Sridharan Srivatsan ,  Jungmin Ko

IPC分类号： H01L21/00

CPC分类号： H01L21/76804 ,  H01L21/76807 ,  H01L22/12 ,  H01L22/20

摘要： A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.

摘要翻译： 提供了一种设计蚀刻配方的方法。 执行蚀刻，包括提供具有设定的卤素与碳的比例的蚀刻气体，从蚀刻气体形成等离子体，以及蚀刻通过过孔的沟槽。 测量通过面。 卤素与碳的比例根据测量的通孔面重置，其中如果测量太多的小面积，则卤素与碳的比例将增加，并且如果测量的面积太小，则卤素与碳的比率降低。 重复前面的步骤，直到获得所需的刻面数量。