发明授权
- 专利标题: Precursors for porous low-dielectric constant materials for use in electronic devices
- 专利标题(中): 用于电子设备的多孔低介电常数材料的前体
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申请号: US12037507申请日: 2008-02-26
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公开(公告)号: US07892635B2公开(公告)日: 2011-02-22
- 发明人: Craig Jon Hawker , James L. Hedrick , Robert D. Miller , Willi Volksen
- 申请人: Craig Jon Hawker , James L. Hedrick , Robert D. Miller , Willi Volksen
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Bozicevic, Field & Francis LLP
- 代理商 Isaac M. Rutenberg
- 主分类号: B32B3/26
- IPC分类号: B32B3/26 ; C08J9/00 ; C08G77/00
摘要:
Precursors are provided for dielectric compositions that are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.
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