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公开(公告)号：US6107357A
公开(公告)日：2000-08-22
申请号：US441728
申请日：1999-11-16
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/00
摘要： A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.
摘要翻译： 提供了一种新颖的电介质组合物，其可用于制造诸如集成电路器件和集成电路封装器件的电子器件。 介电组合物通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备。 导致的介电常数小于约3.0的多孔材料，其中一些材料的介电常数小于约2.5。 还提供了集成电路器件，集成电路封装器件和制造方法。
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2.发明授权Precursors for porous low-dielectric constant materials for use in electronic devices 有权用于电子设备的多孔低介电常数材料的前体公开(公告)号：US07892635B2
公开(公告)日：2011-02-22
申请号：US12037507
申请日：2008-02-26
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： Precursors are provided for dielectric compositions that are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.
摘要翻译： 提供了用于制造诸如集成电路器件和集成电路封装器件的电子器件的电介质组合物的前体。 介电组合物是通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备的。 导致的多孔材料的介电常数小于2.4。
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公开(公告)号：US06541865B2
公开(公告)日：2003-04-01
申请号：US09892234
申请日：2001-06-26
IPC分类号： H01L2352
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.
摘要翻译： 提供了一种新颖的电介质组合物，其可用于制造诸如集成电路器件和集成电路封装器件的电子器件。 介电组合物通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备。 导致的介电常数小于约3.0的多孔材料，其中一些材料的介电常数小于约2.5。 还提供了集成电路器件，集成电路封装器件和制造方法。
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4.发明授权Electronic devices with dielectric compositions and method for their manufacture 有权具有电介质组成的电子器件及其制造方法公开(公告)号：US06342454B1
公开(公告)日：2002-01-29
申请号：US09441730
申请日：1999-11-16
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.
摘要翻译： 提供了一种新颖的电介质组合物，其可用于制造诸如集成电路器件和集成电路封装器件的电子器件。 介电组合物通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备。 导致的介电常数小于约3.0的多孔材料，其中一些材料的介电常数小于约2.5。 还提供了集成电路器件，集成电路封装器件和制造方法。
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5.发明申请Precursors for Porous Low-Dielectric Constant Materials for Use in Electronic Devices 有权用于电子设备的多孔低介电常数材料的前体公开(公告)号：US20080188578A1
公开(公告)日：2008-08-07
申请号：US12037507
申请日：2008-02-26
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： Precursors are provided for dielectric compositions that are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.
摘要翻译： 提供了用于制造诸如集成电路器件和集成电路封装器件的电子器件的电介质组合物的前体。 介电组合物是通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备的。 导致的多孔材料的介电常数小于2.4。
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公开(公告)号：US20110020533A1
公开(公告)日：2011-01-27
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。 聚合物含有热可逆交联。 还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征 交联。
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公开(公告)号：US07862858B2
公开(公告)日：2011-01-04
申请号：US12336904
申请日：2008-12-17
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： B05D3/06
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。 聚合物含有热可逆交联。 还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征 交联。
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公开(公告)号：US20090100553A1
公开(公告)日：2009-04-16
申请号：US12336904
申请日：2008-12-17
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： G12B21/00
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及通过探针的机械作用产生特征的聚合物抗蚀剂层。 聚合物含有热可逆交联。 还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征 交联。
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公开(公告)号：US07491425B2
公开(公告)日：2009-02-17
申请号：US10978028
申请日：2004-10-29
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： B05D3/06
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed is a method that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。 聚合物含有热可逆交联。 还公开了一种方法，其通常包括用与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面，其中加热探针和探针的挤压型机械作用通过热反转在层中产生特征 交联。
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公开(公告)号：US08387160B2
公开(公告)日：2013-02-26
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： G01Q60/24
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。 聚合物含有热可逆交联。 还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征 交联。
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