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公开(公告)号：US08387160B2
公开(公告)日：2013-02-26
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： G01Q60/24
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。 聚合物含有热可逆交联。 还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征 交联。
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2.发明授权Precursors for porous low-dielectric constant materials for use in electronic devices 有权用于电子设备的多孔低介电常数材料的前体公开(公告)号：US07892635B2
公开(公告)日：2011-02-22
申请号：US12037507
申请日：2008-02-26
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： Precursors are provided for dielectric compositions that are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.
摘要翻译： 提供了用于制造诸如集成电路器件和集成电路封装器件的电子器件的电介质组合物的前体。 介电组合物是通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备的。 导致的多孔材料的介电常数小于2.4。
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3.发明授权Substrates prepared by chemical amplification of self-assembled monolayers with spatially localized polymer brushes 有权通过化学扩增自组装单层与空间局部聚合物刷制备的底物公开(公告)号：US06780492B2
公开(公告)日：2004-08-24
申请号：US10074395
申请日：2002-02-11
IPC分类号： B32B500
CPC分类号： B82Y30/00 , B05D1/185 , B05D1/283 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , Y10T428/24802 , Y10T428/24826 , Y10T428/24917 , Y10T428/26 , Y10T428/261 , Y10T428/268 , Y10T428/269
摘要： A method is disclosed for providing a patterned surface wherein predetermined regions of the surface are masked with a self-assembled monolayer (“SAM”) covalently bound to a brush polymer overlayer. The remainder of the substrate surface will generally be functionalized with a second self-assembled monolayer. Preferably, the method involves a microcontact printing technique, wherein a molecular moiety capable of spontaneously forming an SAM upon transfer to a surface is “stamped” onto a substrate surface, followed by growth (or covalent attachment) of a polymer on exposed functional groups within the SAM molecules. Coverage of surface regions with both an SAM and a polymer overlayer provides a number of advantages, particularly with regard to surface masking during etching and the like. The method is useful in the manufacture of microelectronic circuitry, biosensors, high-density assay plates, and the like.
摘要翻译： 公开了一种用于提供图案化表面的方法，其中表面的预定区域被共价结合到刷式聚合物覆盖层上的自组装单层（“SAM”）掩蔽。 基底表面的其余部分通常将用第二自组装单层进行功能化。 优选地，该方法包括微接触印刷技术，其中能够在转移到表面时自发形成SAM的分子部分被“冲压”到基底表面上，随后在暴露的官能团上的聚合物的生长（或共价附着） SAM分子。 具有SAM和聚合物覆盖层的表面区域的覆盖提供了许多优点，特别是关于在蚀刻等期间的表面掩蔽。 该方法在制造微电子电路，生物传感器，高密度测定板等方面是有用的。
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公开(公告)号：US06670285B2
公开(公告)日：2003-12-30
申请号：US09808726
申请日：2001-03-14
申请人： Craig Jon Hawker , James Lupton Hedrick , Elbert Emin Huang , Victor Yee-Way Lee , Teddie Magbitang , Robert Dennis Miller , Willi Volksen
发明人： Craig Jon Hawker , James Lupton Hedrick , Elbert Emin Huang , Victor Yee-Way Lee , Teddie Magbitang , Robert Dennis Miller , Willi Volksen
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , Y10S977/788 , H01L2924/00
摘要： Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.
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公开(公告)号：US06541865B2
公开(公告)日：2003-04-01
申请号：US09892234
申请日：2001-06-26
IPC分类号： H01L2352
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.
摘要翻译： 提供了一种新颖的电介质组合物，其可用于制造诸如集成电路器件和集成电路封装器件的电子器件。 介电组合物通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备。 导致的介电常数小于约3.0的多孔材料，其中一些材料的介电常数小于约2.5。 还提供了集成电路器件，集成电路封装器件和制造方法。
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公开(公告)号：US06326237B1
公开(公告)日：2001-12-04
申请号：US09325988
申请日：1999-06-04
申请人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Michael Anthony Gaynes , Stephen Leslie Buchwalter
发明人： Kenneth Raymond Carter , Craig Jon Hawker , James Lupton Hedrick , Robert Dennis Miller , Michael Anthony Gaynes , Stephen Leslie Buchwalter
IPC分类号： H01L2148
CPC分类号： H01L23/295 , H01L23/293 , H01L2224/16225 , H01L2924/09701 , H01L2924/12044 , H01L2924/15174 , Y10T29/49144 , Y10T29/49146
摘要： The invention is an encapsulated circuit assembly including a chip; a substrate; at least one solder joint, wherein the solder joint spans between the chip and the substrate forming an electrically conductive connection between the chip and the substrate; and an encapsulant formed adjacent the solder joint, wherein the encapsulant comprises a hyperbranched polymer formed by the reaction of a monomer of the formula: (A)nRB, wherein A is a coupling group reactive with B, B is a coupling group reactive with A, n is greater than 1, and R is a group selected from the group consisting of an aromatic group, an aliphatic group, and mixtures thereof Also disclosed is a method of encapsulating a circuit assembly using the encapsulant of the invention.
摘要翻译： 本发明是一种包括芯片的封装电路组件; 底物; 至少一个焊点，其中所述焊点跨越所述芯片和所述衬底，在所述芯片和所述衬底之间形成导电连接; 以及邻近所述焊接接头形成的密封剂，其中所述密封剂包含通过下式的单体反应形成的超支化聚合物：（A）nRB，其中A是与B反应的偶联基团，B是与A反应的偶联基团 ，n大于1，R为选自芳族基团，脂族基团和其混合物的基团。还公开了一种使用本发明的密封剂封装电路组件的方法。
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公开(公告)号：US6114458A
公开(公告)日：2000-09-05
申请号：US159204
申请日：1998-09-23
CPC分类号： C08G83/003 , C08G63/08 , C08G63/60 , Y10S424/16 , Y10S977/754
摘要： A branched radial block copolymer including the reaction product of a dendritic macromolecular initiator, and one or more chain extending monomers.
摘要翻译： 包含树枝状大分子引发剂和一种或多种扩链单体的反应产物的支链径向嵌段共聚物。
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公开(公告)号：US20110020533A1
公开(公告)日：2011-01-27
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译： 抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。 抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。 聚合物含有热可逆交联。 还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征 交联。
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9.发明授权Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens 有权无缺陷的电介质涂层及其使用聚合氮杂原子的制备公开(公告)号：US06685983B2
公开(公告)日：2004-02-03
申请号：US09808724
申请日：2001-03-14
申请人： Craig Jon Hawker , James Lupton Hedrick , Elbert Emin Huang , Victor Yee-Way Lee , Teddie Magbitang , David Mecerreyes , Robert Dennis Miller , Willi Volksen
发明人： Craig Jon Hawker , James Lupton Hedrick , Elbert Emin Huang , Victor Yee-Way Lee , Teddie Magbitang , David Mecerreyes , Robert Dennis Miller , Willi Volksen
IPC分类号： B05D302
CPC分类号： H01L21/02203 , C09D183/02 , C09D183/04 , H01L21/02134 , H01L21/02137 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , Y10T428/24917 , C08L2666/14 , C08L2666/04 , H01L2924/00
摘要： Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.
摘要翻译： 使用含氮聚合物作为孔产生剂制备由多孔聚合物基质组成的无缺陷的介电涂层。 电介质涂层在许多情况下是有用的，包括诸如集成电路器件和集成电路封装器件的电子器件的制造。 电介质涂层是通过在溶剂中混合聚合的含氮致孔剂和与其混合的高温热固性主体聚合物，用混合物涂覆基底表面，加热未固化的涂层以固化主体聚合物并提供玻璃化的两 相基质，然后分解致孔剂。 如此制备的电介质涂层几乎不存在任何缺陷，并且取决于所用致孔剂的量和分子量，以便具有2.5或更小，优选小于约2.0的极低介电常数。 为了容纳本发明的电介质材料而制造的集成电路器件和集成电路封装器件也被提供。
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10.发明授权Electronic devices with dielectric compositions and method for their manufacture 有权具有电介质组成的电子器件及其制造方法公开(公告)号：US06342454B1
公开(公告)日：2002-01-29
申请号：US09441730
申请日：1999-11-16
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/7682 , H01L23/49894 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H05K1/024 , H05K3/28 , Y10S977/773 , Y10S977/788 , Y10T428/12528 , Y10T428/24504 , Y10T428/249953 , H01L2924/00
摘要： A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.
摘要翻译： 提供了一种新颖的电介质组合物，其可用于制造诸如集成电路器件和集成电路封装器件的电子器件。 介电组合物通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备。 导致的介电常数小于约3.0的多孔材料，其中一些材料的介电常数小于约2.5。 还提供了集成电路器件，集成电路封装器件和制造方法。
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