发明授权
- 专利标题： Gallium nitride based compound semiconductor light-emitting device having high emission efficiency and method of manufacturing the same
- 专利标题（中）： 具有高发光效率的氮化镓系化合物半导体发光元件及其制造方法
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申请号： US12097054申请日： 2006-12-13
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公开(公告)号： US07893449B2公开(公告)日： 2011-02-22
- 发明人: Naoki Fukunaga , Hironao Shinohara , Hiroshi Osawa
- 申请人： Naoki Fukunaga , Hironao Shinohara , Hiroshi Osawa
- 申请人地址： JP Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2005-360288 20051214; JP2005-360289 20051214
- 国际申请： PCT/JP2006/324856 WO 20061213
- 国际公布： WO2007/069651 WO 20070621
- 主分类号： H01L29/22
- IPC分类号： H01L29/22
摘要：
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.