发明授权
- 专利标题： Methods of making a ferroelectric memory device having improved interfacial characteristics
- 专利标题（中）： 制备具有改善的界面特性的铁电存储器件的方法
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申请号： US11938956申请日： 2007-11-13
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公开(公告)号： US07897413B2公开(公告)日： 2011-03-01
- 发明人: Wensheng Wang , Yoshimasa Horii
- 申请人： Wensheng Wang , Yoshimasa Horii
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2006-308160 20061114
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/8242 ; H01L21/02 ; H01L27/108 ; H01L29/94
摘要：
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.
公开/授权文献
- US20080261332A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2008-10-23
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