公开(公告)号：US08344434B2

公开(公告)日：2013-01-01

申请号：US13100511

申请日：2011-05-04

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L21/02 ,  H01L27/108 ,  H01L29/94 ,  H01L21/00 ,  H01L21/8242

CPC分类号： H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

公开(公告)号：US20080261332A1

公开(公告)日：2008-10-23

申请号：US11938956

申请日：2007-11-13

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L21/8246

CPC分类号： H01L27/11502 ,  H01L21/32051 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76856 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/55

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过溶胶 - 凝胶法在第一导电膜上形成铁电体膜; 在所述强电介质膜上形成第一导电金属氧化物膜; 对所述第一导电金属氧化物膜进行第一退火; 在第一导电金属氧化物膜上形成第二导电金属氧化物膜，使得第一和第二导电膜用作第二导电膜; 以及通过对第一导电膜，铁电体膜和第二导电膜进行构图来形成电容器。 在形成第一导电金属氧化物膜的步骤中，通过利用随着溅射气体中的氧气的流量比的增加，强电介质膜的铁电特性提高的事实，以氧气的流量比调节铁电特性。

公开(公告)号：US20120171785A1

公开(公告)日：2012-07-05

申请号：US13417811

申请日：2012-03-12

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

公开(公告)号：US20110204479A1

公开(公告)日：2011-08-25

申请号：US13100511

申请日：2011-05-04

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L29/02

CPC分类号： H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

公开(公告)号：US20080111172A1

公开(公告)日：2008-05-15

申请号：US11939707

申请日：2007-11-14

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L21/8229 ,  H01L29/78

CPC分类号： H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

公开(公告)号：US08652854B2

公开(公告)日：2014-02-18

申请号：US13417811

申请日：2012-03-12

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

公开(公告)号：US08153448B2

公开(公告)日：2012-04-10

申请号：US12453451

申请日：2009-05-12

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

公开(公告)号：US07960228B2

公开(公告)日：2011-06-14

申请号：US11939707

申请日：2007-11-14

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L21/8242 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

公开(公告)号：US07897413B2

公开(公告)日：2011-03-01

申请号：US11938956

申请日：2007-11-13

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L21/00 ,  H01L21/8242 ,  H01L21/02 ,  H01L27/108 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/32051 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76856 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/55

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过溶胶 - 凝胶法在第一导电膜上形成铁电体膜; 在所述强电介质膜上形成第一导电金属氧化物膜; 对所述第一导电金属氧化物膜进行第一退火; 在第一导电金属氧化物膜上形成第二导电金属氧化物膜，使得第一和第二导电膜用作第二导电膜; 以及通过对第一导电膜，铁电体膜和第二导电膜进行构图来形成电容器。 在形成第一导电金属氧化物膜的步骤中，通过利用随着溅射气体中的氧气的流量比的增加，强电介质膜的铁电特性提高的事实，以氧气的流量比调节铁电特性。

公开(公告)号：US07547933B2

公开(公告)日：2009-06-16

申请号：US10695643

申请日：2003-10-29

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。