发明授权
- 专利标题： Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode
- 专利标题（中）： 用铝或铝合金后电极制造半导体器件的方法
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申请号： US11454121申请日： 2006-06-16
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公开(公告)号： US07897452B2公开(公告)日： 2011-03-01
- 发明人: Kenichi Kazama , Tsunehiro Nakajima , Koji Sasaki , Akio Shimizu , Takashi Hayashi , Hiroki Wakimoto
- 申请人： Kenichi Kazama , Tsunehiro Nakajima , Koji Sasaki , Akio Shimizu , Takashi Hayashi , Hiroki Wakimoto
- 申请人地址： JP Tokyo
- 专利权人： Fuji Electric Systems Co., Ltd.
- 当前专利权人： Fuji Electric Systems Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2005-179720 20050620
- 主分类号： H01L21/8249
- IPC分类号： H01L21/8249
摘要：
A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.
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