摘要:
A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.
摘要:
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 μm.
摘要:
A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.
摘要:
Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.
摘要:
A porous, roll-grinding tool has an abrasive surface which is adapted to contact and grind the surface of a roll and configured to a planar polygonal shape having 4 to 20 sides. Using the grinding tool, a roll can be ground within a satisfactory dimensional tolerance, with feed marks crossing the circumferential direction of the roll at a small feed mark pitch inclination angle, so that no streaky printing defects will be produced when the ground roll is used in printing.
摘要:
Provided is a device for manufacturing an optical film having satisfactorily reduced thickness unevenness, by using a melt-casting film forming method, which device includes a casting die for discharging a molten film-forming material including a thermoplastic resin into a film-like shape; a pair of a first rotation roll and a second rotation roll between which the discharged film-shaped molten article is pinched to be cooled and solidified to make the film-shaped molten article; and two pairs of wind shield plates each of which pairs are arranged between the shaft-direction ends of the first and second rotation rolls and an end part in the width-direction of the film-shaped molten article, wherein the wind shield plates are placed approximately perpendicular to the surface of the film-shaped molten article, and wherein each pair of the wind shield plates are placed approximately in parallel.
摘要:
A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.
摘要翻译:半导体装置包括形成在半导体芯片上的铝电极膜; 以及在所述铝电极膜上形成的镀镍层,其中存在于所述镀镍层和所述镀镍层与所述铝电极膜之间的界面处的钠和钾的浓度为3.20×1014原子/ cm 2以下。
摘要:
In a lapping machine comprising a lapping plate and a conditioning carrier disposed thereon, the carrier being provided with bores for receiving conditioning grindstone segments, the lapping plate is polished and conditioned by cooperatively rotating the lapping plate and the carrier and feeding loose abrasive grains to the lapping plate. The conditioning grindstone segment of a shape of arcuated trapezoid having an included angle of 180°-90° is fitted in the carrier bore.