Method of producing a semiconductor device with an aluminum or aluminum alloy electrode
    1.
    发明申请
    Method of producing a semiconductor device with an aluminum or aluminum alloy electrode 有权
    制造具有铝或铝合金电极的半导体器件的方法

    公开(公告)号:US20070004098A1

    公开(公告)日:2007-01-04

    申请号:US11454121

    申请日:2006-06-16

    IPC分类号: H01L21/20

    摘要: A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

    摘要翻译: 一种制造厚度为90μm至200μm的半导体器件的方法,并且在后表面上具有电极,其通过优化铝硅电极的硅浓度和厚度来实现高比例的无缺陷器件。 在硅衬底的第一主表面上形成表面器件结构。 在研磨后的第二主表面上形成缓冲层和集电体层,以减小基板的厚度。 在集电体层上形成集电极,其包括厚度为0.3〜1.0μm的硅铝膜的第1层,硅浓度为0.5〜2重量%,优选为1重量%以下 。

    Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode
    3.
    发明授权
    Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode 有权
    用铝或铝合金后电极制造半导体器件的方法

    公开(公告)号:US07897452B2

    公开(公告)日:2011-03-01

    申请号:US11454121

    申请日:2006-06-16

    IPC分类号: H01L21/8249

    摘要: A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

    摘要翻译: 一种制造厚度为90μm至200μm的半导体器件的方法,并且在后表面上具有电极,通过优化硅 - 硅电极的硅浓度和厚度来实现高比例的无缺陷器件。 在硅衬底的第一主表面上形成表面器件结构。 在研磨后的第二主表面上形成缓冲层和集电体层,以减小基板的厚度。 在集电体层上形成集电极,其包括厚度为0.3〜1.0μm的硅铝膜的第一层,硅浓度为0.5〜2重量%,优选为1重量%以下 。

    Semiconductor device manufacturing method and device for same
    4.
    发明授权
    Semiconductor device manufacturing method and device for same 失效
    半导体装置制造方法及装置

    公开(公告)号:US08709912B2

    公开(公告)日:2014-04-29

    申请号:US12937434

    申请日:2009-04-15

    IPC分类号: H01L21/30

    摘要: Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.

    摘要翻译: 即使将处理用基板与外部形状大于用于处理的基板的支撑基板接合,也可以将光热转换层和粘合剂层插入,并且与该基板相反的一侧进行处理的基板的表面 表面被处理,防止在用于处理的基板的处理表面上出现有缺陷的外观。 在用于处理的基板3的一个表面上形成粘合剂层4,在具有大于基板表面的表面的表面的支撑基板1的一个表面上形成光热转换层2用于处理, 并且将处理用基板3粘合到光热转换层2的表面上,并粘合层4插入,得到层叠体。 将该分层部件放置在旋涂机装置的室8内的旋转卡盘9上,将碱性水溶液11滴落到从基板突出的光热转换层2的部分2a上进行处理,然后进行清洗 在该部分上使用高压清洁喷嘴12.然后,在用于处理的基板3的表面上进行研磨,湿处理或类似的处理,以制造半导体器件。

    Porous grinding tool and method for grinding a roll
    6.
    发明授权
    Porous grinding tool and method for grinding a roll 有权
    多孔研磨工具和研磨辊的方法

    公开(公告)号:US06468138B1

    公开(公告)日:2002-10-22

    申请号:US09345897

    申请日:1999-07-01

    IPC分类号: B24B100

    摘要: A porous, roll-grinding tool has an abrasive surface which is adapted to contact and grind the surface of a roll and configured to a planar polygonal shape having 4 to 20 sides. Using the grinding tool, a roll can be ground within a satisfactory dimensional tolerance, with feed marks crossing the circumferential direction of the roll at a small feed mark pitch inclination angle, so that no streaky printing defects will be produced when the ground roll is used in printing.

    摘要翻译: 多孔的滚动研磨工具具有研磨表面,其适于接触和研磨辊的表面并且被配置成具有4至20个侧面的平面多边形形状。 使用研磨工具,辊可以在令人满意的尺寸公差内被研磨,其中进给标记以小的进给标记间距倾斜角与辊的圆周方向交叉,使得当使用地面辊时不会产生条纹印刷缺陷 在打印。

    Device for manufacturing optical film
    7.
    发明授权
    Device for manufacturing optical film 有权
    光学薄膜制造装置

    公开(公告)号:US08974214B2

    公开(公告)日:2015-03-10

    申请号:US13817879

    申请日:2011-08-22

    申请人: Kenichi Kazama

    发明人: Kenichi Kazama

    摘要: Provided is a device for manufacturing an optical film having satisfactorily reduced thickness unevenness, by using a melt-casting film forming method, which device includes a casting die for discharging a molten film-forming material including a thermoplastic resin into a film-like shape; a pair of a first rotation roll and a second rotation roll between which the discharged film-shaped molten article is pinched to be cooled and solidified to make the film-shaped molten article; and two pairs of wind shield plates each of which pairs are arranged between the shaft-direction ends of the first and second rotation rolls and an end part in the width-direction of the film-shaped molten article, wherein the wind shield plates are placed approximately perpendicular to the surface of the film-shaped molten article, and wherein each pair of the wind shield plates are placed approximately in parallel.

    摘要翻译: 提供一种通过使用熔融流延膜形成方法制造具有令人满意的减小厚度不均匀性的光学膜的装置,该装置包括:用于将包含热塑性树脂的熔融成膜材料排出成膜状的铸模; 一对第一旋转辊和第二旋转辊,排出的膜状熔融制品被夹在其之间以被冷却和固化,以制成膜状熔融制品; 以及两对挡风板,每对挡风板配置在第一旋转辊和第二旋转辊的轴向端部与膜状熔融物品的宽度方向上的端部之间,其中,设置挡风板 大致垂直于膜状熔融制品的表面,并且其中每对挡风板大致平行放置。