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    Method of producing a semiconductor device with an aluminum or aluminum alloy electrode
    3.
    发明申请
    Method of producing a semiconductor device with an aluminum or aluminum alloy electrode 有权
    制造具有铝或铝合金电极的半导体器件的方法

    公开(公告)号：US20070004098A1

    公开(公告)日：2007-01-04

    申请号：US11454121

    申请日：2006-06-16

    申请人： Kenichi Kazama ,  Tsunehiro Nakajima ,  Koji Sasaki ,  Akio Shimizu ,  Takashi Hayashi ,  Hiroki Wakimoto

    发明人： Kenichi Kazama ,  Tsunehiro Nakajima ,  Koji Sasaki ,  Akio Shimizu ,  Takashi Hayashi ,  Hiroki Wakimoto

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7393 ,  H01L29/0834 ,  H01L29/41725 ,  H01L29/456 ,  H01L29/66333 ,  H01L29/7395

    摘要： A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

    摘要翻译： 一种制造厚度为90μm至200μm的半导体器件的方法，并且在后表面上具有电极，其通过优化铝硅电极的硅浓度和厚度来实现高比例的无缺陷器件。 在硅衬底的第一主表面上形成表面器件结构。 在研磨后的第二主表面上形成缓冲层和集电体层，以减小基板的厚度。 在集电体层上形成集电极，其包括厚度为0.3〜1.0μm的硅铝膜的第1层，硅浓度为0.5〜2重量％，优选为1重量％以下 。

    Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode
    4.
    发明授权
    Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode 有权
    用铝或铝合金后电极制造半导体器件的方法

    公开(公告)号：US07897452B2

    公开(公告)日：2011-03-01

    申请号：US11454121

    申请日：2006-06-16

    申请人： Kenichi Kazama ,  Tsunehiro Nakajima ,  Koji Sasaki ,  Akio Shimizu ,  Takashi Hayashi ,  Hiroki Wakimoto

    发明人： Kenichi Kazama ,  Tsunehiro Nakajima ,  Koji Sasaki ,  Akio Shimizu ,  Takashi Hayashi ,  Hiroki Wakimoto

    IPC分类号： H01L21/8249

    CPC分类号： H01L29/7393 ,  H01L29/0834 ,  H01L29/41725 ,  H01L29/456 ,  H01L29/66333 ,  H01L29/7395

    摘要： A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

    摘要翻译： 一种制造厚度为90μm至200μm的半导体器件的方法，并且在后表面上具有电极，通过优化硅 - 硅电极的硅浓度和厚度来实现高比例的无缺陷器件。 在硅衬底的第一主表面上形成表面器件结构。 在研磨后的第二主表面上形成缓冲层和集电体层，以减小基板的厚度。 在集电体层上形成集电极，其包括厚度为0.3〜1.0μm的硅铝膜的第一层，硅浓度为0.5〜2重量％，优选为1重量％以下 。

    Liquid discharge head and manufacturing method of the same
    9.
    发明授权
    Liquid discharge head and manufacturing method of the same 有权
    排液头及其制造方法相同

    公开(公告)号：US08434850B2

    公开(公告)日：2013-05-07

    申请号：US13233875

    申请日：2011-09-15

    申请人： Satoshi Ibe ,  Hiroto Komiyama ,  Toshiaki Kurosu ,  Kouji Hasegawa ,  Koji Sasaki

    发明人： Satoshi Ibe ,  Hiroto Komiyama ,  Toshiaki Kurosu ,  Kouji Hasegawa ,  Koji Sasaki

    IPC分类号： B41J29/377 ,  B41J2/05

    CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  Y10T29/49401

    摘要： A liquid discharge head having a liquid discharge head substrate including an element row in which a plurality of energy generating elements for generating thermal energy for use in discharging liquid are arranged, and a discharge port member corresponding to each of the plurality of energy generating elements, the discharge port members including a plurality of walls in contact with the liquid discharge head substrate to form a plurality of liquid chambers for storing liquid and a plurality of discharge ports which communicate with each of the plurality of the liquid chambers to discharge liquid with the thermal energy generated by the energy generating element. The liquid discharge head further includes a plurality of heat dissipating members corresponding to each of the plurality of the liquid chambers and having a first portion exposed to the liquid chamber and a second portion exposed to the atmosphere.

    摘要翻译： 一种液体排出头，其具有排液头基板，该液体排出头基板包括排列有用于产生排出液体的热能的多个能量产生元件的元件列，以及与多个能量产生元件中的每一个对应的排出口构件， 所述排出口构件包括与所述液体排出头基板接触的多个壁，以形成用于储存液体的多个液体室和与所述多个所述液体室中的每一个连通的多个排出口，以将热量排出液体 由能量产生元件产生的能量。 液体排出头还包括对应于多个液体室中的每一个的多个散热构件，并且具有暴露于液体室的第一部分和暴露于大气的第二部分。