Invention Grant
- Patent Title: Method of forming an isolation structure
- Patent Title (中): 形成隔离结构的方法
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Application No.: US12357094Application Date: 2009-01-21
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Publication No.: US07897477B2Publication Date: 2011-03-01
- Inventor: Ching-Chun Wang , Tzu-Hsuan Hsu
- Applicant: Ching-Chun Wang , Tzu-Hsuan Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.
Public/Granted literature
- US20100181638A1 METHOD OF FORMING AN ISOLATION STRUCTURE Public/Granted day:2010-07-22
Information query
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