公开(公告)号：US08686533B2

公开(公告)日：2014-04-01

申请号：US13552734

申请日：2012-07-19

Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu

Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu

IPC: H01L29/00

CPC classification number: H01L23/522 ,  H01L21/6836 ,  H01L21/76256 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

Abstract: Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.

Abstract translation: 提供一种制造半导体器件的方法，该半导体器件包括提供具有正面和背面的半导体衬底，在半导体衬底的正面形成第一电路和第二电路，将半导体衬底的正面粘合到 载体衬底，从背面减薄半导体衬底，并且从半导体衬底的背侧到前侧形成沟槽，以将第一电路与第二电路隔离。

公开(公告)号：US08324002B2

公开(公告)日：2012-12-04

申请号：US13206228

申请日：2011-08-09

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/0232

CPC classification number: H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

Abstract: Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

Abstract translation: 提供一种形成和/或使用背面照射传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

公开(公告)号：US20100207230A1

公开(公告)日：2010-08-19

申请号：US12371146

申请日：2009-02-13

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L31/0352 ,  H01L21/76 ,  H01L21/66

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20100102411A1

公开(公告)日：2010-04-29

申请号：US12651236

申请日：2009-12-31

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/00 ,  H01L31/062

CPC classification number: H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

Abstract: A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.

Abstract translation: 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的金属栅极。

公开(公告)号：US08405177B2

公开(公告)日：2013-03-26

申请号：US13238420

申请日：2011-09-21

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20120007204A1

公开(公告)日：2012-01-12

申请号：US13238420

申请日：2011-09-21

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20110294250A1

公开(公告)日：2011-12-01

申请号：US13206228

申请日：2011-08-09

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/18

CPC classification number: H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

Abstract: Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

Abstract translation: 提供一种形成和/或使用背面照明传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

公开(公告)号：US20110031542A1

公开(公告)日：2011-02-10

申请号：US12904903

申请日：2010-10-14

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L31/14 ,  H01L29/66

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20100181635A1

公开(公告)日：2010-07-22

申请号：US12405454

申请日：2009-03-17

Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC: H01L31/04 ,  H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract translation: 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

公开(公告)号：US07923279B2

公开(公告)日：2011-04-12

申请号：US12405454

申请日：2009-03-17

Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract translation: 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。