Invention Grant
- Patent Title: Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device
- Patent Title (中): 半导体晶片及其制造方法以及制造半导体器件的方法
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Application No.: US12823913Application Date: 2010-06-25
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Publication No.: US07897509B2Publication Date: 2011-03-01
- Inventor: Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
- Applicant: Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corp.
- Current Assignee: Renesas Electronics Corp.
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JP2006-265873 20060928
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
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