发明授权
- 专利标题： Piezoelectric element
- 专利标题（中）： 压电元件
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申请号： US12073238申请日： 2008-03-03
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公开(公告)号： US07901800B2公开(公告)日： 2011-03-08
- 发明人: Kenji Shibata , Fumihito Oka
- 申请人： Kenji Shibata , Fumihito Oka
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Cable, Ltd.
- 当前专利权人： Hitachi Cable, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2007-241207 20070918
- 主分类号： B32B9/00
- IPC分类号： B32B9/00 ; B32B19/00 ; G11B11/105 ; G11B5/64 ; H01L41/00 ; H02N2/00
摘要：
A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 μm to 10 μm. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.
公开/授权文献
- US20090075066A1 Piezoelectric element 公开/授权日：2009-03-19
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