Invention Grant
US07901964B2 Method of fabricating AC light emitting device having photonic crystal structure
有权
制造具有光子晶体结构的AC发光器件的方法
- Patent Title: Method of fabricating AC light emitting device having photonic crystal structure
- Patent Title (中): 制造具有光子晶体结构的AC发光器件的方法
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Application No.: US12546155Application Date: 2009-08-24
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Publication No.: US07901964B2Publication Date: 2011-03-08
- Inventor: Jae-Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
- Applicant: Jae-Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2005-0107516 20051110
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.
Public/Granted literature
- US20090311816A1 AC LIGHT EMITTING DEVICE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-12-17
Information query
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