发明授权
- 专利标题： Inducing strain in the channels of metal gate transistors
- 专利标题（中）： 在金属栅极晶体管的通道中引起应变
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申请号： US10953295申请日： 2004-09-29
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公开(公告)号： US07902058B2公开(公告)日： 2011-03-08
- 发明人: Suman Datta , Jack Kavalieros , Mark L. Doczy , Matthew V. Metz , Justin K. Brask , Robert S. Chau , Brian S. Doyle
- 申请人： Suman Datta , Jack Kavalieros , Mark L. Doczy , Matthew V. Metz , Justin K. Brask , Robert S. Chau , Brian S. Doyle
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
In a metal gate replacement process, strain may be selectively induced in the channels of NMOS and PMOS transistors. For example, a material having a higher coefficient of thermal expansion than the substrate may be used to form the gate electrodes of PMOS transistors. A material with a lower coefficient of thermal expansion than that of the substrate may be used to form the gate electrodes of NMOS transistors.
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