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US07902549B2 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same 有权
具有低介电常数的半导体器件的绝缘层的沉积方法，使用其的薄膜晶体管基板及其制造方法

Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same
Abstract:
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.
Abstract(Chinese):

本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法 同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成 用于半导体器件的保护膜。 本发明还涉及使用该方法及其制备方法的薄膜晶体管。

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