Invention Grant
- Patent Title: Phosphorus activated NMOS using SiC process
- Patent Title (中): 磷激活的NMOS使用SiC工艺
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Application No.: US11558161Application Date: 2006-11-09
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Publication No.: US07902576B2Publication Date: 2011-03-08
- Inventor: Srinivasan Chakravarthi , P.R. Chidambaram
- Applicant: Srinivasan Chakravarthi , P.R. Chidambaram
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A method (10) of forming a transistor (100) includes treating (12) at least some of a semiconductor substrate (102) with carbon and then forming (18) a gate structure (114) over the semiconductor substrate. A channel region (122) is thereby being defined within the semiconductor substrate (102) below the gate structure (114). Source and drain regions (140, 142) are then formed (26) within the semiconductor substrate (102) on opposing sides of the channel (122) with a phosphorus dopant.
Public/Granted literature
- US20070072383A1 Phosphorus Activated NMOS Using SiC Process Public/Granted day:2007-03-29
Information query
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