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发明授权
US07902597B2 Transistors with laterally extended active regions and methods of fabricating same 失效
具有横向延伸的有源区域的晶体管及其制造方法

Transistors with laterally extended active regions and methods of fabricating same
摘要：
A transistor and method of fabricating the transistor are disclosed. The transistor is disposed in an active region of a substrate defined by an isolation region and includes a gate electrode and associated source/drain regions. The isolation region includes an upper isolation region and an lower isolation region, wherein the upper isolation region is formed with sidewalls having, at least in part, a positive profile.
摘要（中）：

公开了晶体管和晶体管的制造方法。 晶体管设置在由隔离区域限定的衬底的有源区域中，并且包括栅极电极和相关的源极/漏极区域。 隔离区域包括上部隔离区域和下部隔离区域，其中上部隔离区域形成有具有至少部分至少部分为正形状的侧壁。

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