发明授权
- 专利标题: Single wafer etching method
- 专利标题(中): 单晶片蚀刻方法
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申请号: US11669431申请日: 2007-01-31
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公开(公告)号: US07906438B2公开(公告)日: 2011-03-15
- 发明人: Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
- 申请人: Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
- 申请人地址: JP Tokyo
- 专利权人: Sumco Corporation
- 当前专利权人: Sumco Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2006-021899 20060131
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461
摘要:
An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.