发明授权
- 专利标题： Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating
- 专利标题（中）： 使用红外辐射和加热控制硅晶片中的氧沉淀
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申请号： US11441065申请日： 2006-05-26
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公开(公告)号： US07906443B2公开(公告)日： 2011-03-15
- 发明人: Katsuto Tanahashi , Hiroshi Kaneta
- 申请人： Katsuto Tanahashi , Hiroshi Kaneta
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Fujitsu Patent Center
- 优先权： JP2006-038547 20060215
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04 ; B23K26/00
摘要：
A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.
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